PESD5V0L2BT ,Low capacitance double bidirectional ESD protection diodes in SOT23General descriptionLow capacitance double bidirectional ElectroStatic Discharge (ESD) protection di ..
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PESD12VL2BT-PESD15VL2BT-PESD24VL2BT-PESD3V3L2BT-PESD5V0L2BT
Low capacitance double bidirectional ESD protection diodes in SOT23
Product profile1.1 General descriptionLow capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodesina
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 02 — 25 August 2009 Product data sheet ESD protection of two lines n Ultra low leakage current: IRM <90nA Max. peak pulse power: PPP= 350W n ESD protection up to 23 kV Low clamping voltage: VCL =26V n IEC 61000-4-2, level 4 (ESD) Small SMD plastic package n IEC 61000-4-5 (surge); IPP =15A Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection
Table 1. Quick reference dataVRWM reverse standoff voltage
PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V diode capacitance VR =0V;
f=1MHz
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23 Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning cathode1 cathode2 double cathode
006aaa155
Table 3. Ordering informationPESD3V3L2BT - plastic surface mounted package; 3 leads SOT23
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
Table 4. Marking codesPESD3V3L2BT V3*
PESD5V0L2BT V4*
PESD12VL2BT V5*
PESD15VL2BT V6*
PESD24VL2BT V7*
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23 Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power tp= 8/20μs [1][2]
PESD3V3L2BT - 350 W
PESD5V0L2BT - 350 W
PESD12VL2BT - 200 W
PESD15VL2BT - 200 W
PESD24VL2BT - 200 W
IPP peak pulse current tp= 8/20μs [1][2]
PESD3V3L2BT - 15 A
PESD5V0L2BT - 13 A
PESD12VL2BT - 5 A
PESD15VL2BT - 5 A
PESD24VL2BT - 3 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratingsVESD electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3L2BT - 30 kV
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT - 23 kV
PESDxL2BT series HBM MIL-STD883 - 10 kV
Table 7. ESD standards complianceIEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-STD883, class3 >4kV
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23 Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage
PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V
IRM reverse leakage current
PESD3V3L2BT VRWM= 3.3V - 0.09 2 μA
PESD5V0L2BT VRWM= 5.0V - 0.01 1 μA
PESD12VL2BT VRWM =12V - <1 50 nA
PESD15VL2BT VRWM =15V - <1 50 nA
PESD24VL2BT VRWM =24V - <1 50 nA
VBR breakdown voltage IR =5mA
PESD3V3L2BT 5.8 6.4 6.9 V
PESD5V0L2BT 7.0 7.6 8.2 V
PESD12VL2BT 14.2 15.8 16.7 V
PESD15VL2BT 17.1 18.8 20.3 V
PESD24VL2BT 25.4 27.8 30.3 V diode capacitance VR =0V;
f=1MHz
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF
VCL clamping voltage [1][2]
PESD3V3L2BT IPP =1A - - 8 V
IPP =15A - - 26 V
PESD5V0L2BT IPP =1A - - 10 V
IPP =13A - - 28 V
PESD12VL2BT IPP =1A - - 20 V
IPP =5A - - 37 V
PESD15VL2BT IPP =1A - - 25 V
IPP =5A - - 44 V
PESD24VL2BT IPP =1A - - 40 V
IPP =3A - - 70 V
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
rdif differential resistance IR =1mA
PESD3V3L2BT - - 400 Ω
PESD5V0L2BT - - 80 Ω
PESD12VL2BT - - 200 Ω
PESD15VL2BT - - 225 Ω
PESD24VL2BT - - 300 Ω
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
