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PESD12VS1UA-PESD5V0S1UA
Unidirectional ESD protection for transient voltage suppression
Product profile1.1 General descriptionUnidirectional ElectroStatic Discharge (ESD) protection diodes in a very small
Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and transient overvoltage.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage
suppression
Rev. 01 — 9 February 2009 Product data sheet
Table 1. Product overviewPESD5V0S1UA SOD323 SC-76 single
PESD12VS1UA Transient Voltage Suppression (TVS)
protection of one line ESD protection up to30 kV Max. peak pulse power: PPP= 890W n IEC 61000-4-2; level 4 (ESD) Low clamping voltage: VCL =19V n IEC 61000-4-5 (surge); IPP =47A Low leakage current: IRM= 300 nA n AEC-Q101 qualified Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Medical and industrial equipment
Table 2. Quick reference dataTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage
PESD5V0S1UA - - 5 V
PESD12VS1UA - - 12 V diode capacitance f=1 MHz; VR =0V
PESD5V0S1UA - 480 530 pF
PESD12VS1UA - 160 180 pF
NXP Semiconductors PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking Limiting values
Table 3. Pinning cathode [1] anode
006aaa1521
Table 4. Ordering informationPESD5V0S1UA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD12VS1UA
Table 5. Marking codesPESD5V0S1UA AV
PESD12VS1UA AW
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power tp= 8/20μs [1][2]
PESD5V0S1UA - 890 W
PESD12VS1UA - 600 W
IPP peak pulse current tp= 8/20μs [1][2]
PESD5V0S1UA - 47 A
PESD12VS1UA - 22.5 A
NXP Semiconductors PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Soldering point of cathode tab.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[1] Device stressed with ten non-repetitive ESD pulses.
Ptot total power dissipation Tamb≤25°C [3]- 360 mW
[4]- 500 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratingsTamb =25 °C unless otherwise specified.
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] -30 kV
machine model - 400 V
MIL-STD-883 (human
body model)
-16 kV
Table 8. ESD standards complianceIEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
Table 6. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
Table 9. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 345 K/W
[2]- - 250 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[3] --90 K/W
NXP Semiconductors PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression Characteristics[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Table 10. CharacteristicsTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage
PESD5V0S1UA - - 5 V
PESD12VS1UA - - 12 V
IRM reverse leakage current
PESD5V0S1UA VRWM=5V - 0.3 4 μA
PESD12VS1UA VRWM=12V - <1 100 nA
VBR breakdown voltage IR =5mA
PESD5V0S1UA 6.2 6.8 7.3 V
PESD12VS1UA 13.3 14.5 15.75 V diode capacitance f=1 MHz; =0V
PESD5V0S1UA - 480 530 pF
PESD12VS1UA - 160 180 pF
VCL clamping voltage [1]
PESD5V0S1UA IPP=47A --19 V
IPP=25A - - 13.5 V
IPP=5A - - 9.8 V
PESD12VS1UA IPP= 22.5A - - 27 V
IPP=15A - - 23.5 V
IPP=5A --19 V
rdif differential resistance IR =5mA
PESD5V0S1UA - 2 100 Ω
PESD12VS1UA - 5 100 Ω
NXP Semiconductors PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression
NXP Semiconductors PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage suppression
