PESD3V3S1UB ,ESD protection diodes in SOD523 packagePESDxS1UB seriesESD protection diodes in SOD523 packageRev. 02 — 24 August 2009 Product data sheet1 ..
PESD3V3S1UL ,Unidirectional ESD protection diodesFeatures and benefits Ultra small SMD plastic package Ultra low leakage current: I <700 nARM ES ..
PESD3V3S2UAT ,Double ESD protection diodes in SOT23 package DISCRETE SEMICONDUCTORS DATA SHEETPESDxS2UAT seriesDouble ESD protection diodes in SOT23 packagePr ..
PESD3V3S2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 packageFEATURES QUICK REFERENCE DATA• Uni-directional ESD protection of up to two linesSYMBOL PARAMETER VA ..
PESD3V3S2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 packageFEATURES QUICK REFERENCE DATA• Uni-directional ESD protection of up to two linesSYMBOL PARAMETER VA ..
PESD3V3S4UD ,Quadruple ESD protection diode arrays in a SOT457 packageFeaturesn ESD protection of up to 4 lines n ESD protection up to 30 kVn Max. peak pulse power: P = ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD12VS1UB-PESD24VS1UB-PESD3V3S1UB-PESD5V0S1UB
PESDxS1UB series; ESD protection diodes in SOD523 package
Product profile1.1 General descriptionUnidirectional ESD protection diodeina SOD523 plastic package designedto protect one
transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and
other transients.
1.2 Features Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20μs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20μs
1.3 Applications Computers and peripherals Communication systems Audio and video equipment Data lines CAN bus protection
1.4 Quick reference data
PESDxS1UB series
ESD protection diodes in SOD523 package
Rev. 02 — 24 August 2009 Product data sheet
Table 1. Quick reference dataVRWM reverse standoff voltage
PESD3V3S1UB 3.3 V
PESD5V0S1UB 5 V
PESD12VS1UB 12 V
PESD15VS1UB 15 V
PESD24VS1UB 24 V
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking diode capacitance VR = 0 V; f = 1 MHz
PESD3V3S1UB 207 pF
PESD5V0S1UB 152 pF
PESD12VS1UB 38 pF
PESD15VS1UB 32 pF
PESD24VS1UB 23 pF
number of protected
lines
Table 1. Quick reference data …continued
Table 2. Discrete pinning cathode [1] anode
sym035
Table 3. Ordering informationPESDxS1UB SC -79 plastic surface mounted package; 2 leads SOD523
Table 4. MarkingPESD3V3S1UB N1
PESD5V0S1UB N2
PESD12VS1UB N3
PESD15VS1UB N4
PESD24VS1UB N5
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package Limiting values[1] Non-repetitive current pulse 8/20 μs exponentially decay waveform; see Figure1.
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure2.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power 8/20μs [1]
PESD3V3S1UB - 330 W
PESD5V0S1UB - 260 W
PESD12VS1UB - 180 W
PESD15VS1UB - 160 W
PESD24VS1UB - 160 W
IPP peak pulse current 8/20μs [1]
PESD3V3S1UB - 18 A
PESD5V0S1UB - 15 A
PESD12VS1UB - 5 A
PESD15VS1UB - 5 A
PESD24VS1UB - 3 A junction temperature - 150 °C
Tamb operating ambient
temperature
−65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratingsESD electrostatic discharge
capability
IEC 61000-4-2
(contact discharge)
[1]
PESD3V3S1UB - 30 kV
PESD5V0S1UB - 30 kV
PESD12VS1UB - 30 kV
PESD15VS1UB - 30 kV
PESD24VS1UB - 23 kV
PESDxS1UB series HBM MIL-STD883 - 10 kV
Table 7. ESD standards complianceIEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package Characteristics
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified
VRWM reverse standoff voltage
PESD3V3S1UB - - 3.3 V
PESD5V0S1UB - - 5 V
PESD12VS1UB - - 12 V
PESD15VS1UB - - 15 V
PESD24VS1UB - - 24 V
IRM reverse leakage current see Figure7
PESD3V3S1UB VRWM = 3.3 V - 0.7 2 μA
PESD5V0S1UB VRWM = 5 V - 0.1 1 μA
PESD12VS1UB VRWM = 12 V - < 1 50 nA
PESD15VS1UB VRWM = 15 V - < 1 50 nA
PESD24VS1UB VRWM = 24 V - < 1 50 nA
VBR breakdown voltage IR = 5 mA
PESD3V3S1UB 5.2 5.6 6.0 V
PESD5V0S1UB 6.4 6.8 7.2 V
PESD12VS1UB 14.7 15.0 15.3 V
PESD15VS1UB 17.6 18.0 18.4 V
PESD24VS1UB 26.5 27.0 27.5 V diode capacitance VR = 0 V; f = 1 MHz;
see Figure 5 and6
PESD3V3S1UB - 207 300 pF
PESD5V0S1UB - 152 200 pF
PESD12VS1UB - 38 75 pF
PESD15VS1UB - 32 70 pF
PESD24VS1UB - 23 50 pF
V(CL)R clamping voltage [1]
PESD3V3S1UB IPP = 1 A - - 7 V
IPP = 18 A - - 20 V
PESD5V0S1UB IPP = 1 A - - 9 V
IPP = 15 A - - 20 V
PESD12VS1UB IPP = 1 A - - 19 V
IPP = 5A - - 35 V
PESD15VS1UB IPP = 1 A - - 23 V
IPP = 5 A - - 40 V
PESD24VS1UB IPP = 1 A - - 36 V
IPP = 3 A - - 70 V
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package[1] Non-repetitive current pulse 8/20 μs exponentially decay waveform; see Figure1.
Rdiff differential resistance
PESD3V3S1UB IR = 1 mA - - 400 Ω
PESD5V0S1UB IR = 1 mA - - 80 Ω
PESD12VS1UB IR = 1 mA - - 200 Ω
PESD15VS1UB IR = 1 mA - - 225 Ω
PESD24VS1UB IR = 0.5 mA - - 300 Ω
Table 8. Characteristics …continuedTamb = 25 °C unless otherwise specified
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
NXP Semiconductors PESDxS1UB series
ESD protection diodes in SOD523 package
