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Partno	Mfg	Dc	Qty	Available	Descript
PESD12VS2UQ	NXP	N/a	2120	avai	Double ESD protection diodes in SOT663 package
PESD24VS2UQ	NXP	N/a	96000	avai	Double ESD protection diodes in SOT663 package
PESD5V0S2UQ	NXP	N/a	5735	avai	Double ESD protection diodes in SOT663 package
PESD5V0S2UQ	NXP/PHILIPS	N/a	44000	avai	Double ESD protection diodes in SOT663 package

PESD24VS2UQ ,Double ESD protection diodes in SOT663 packageLimiting values Table 5.
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PESD12VS2UQ-PESD24VS2UQ-PESD5V0S2UQ
Double ESD protection diodes in SOT663 package
Product profile1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra
small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect
up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 04 — 26 January 2010 Product data sheet Unidirectional ESD protection of up to
two lines ESD protection up to30 kV Max. peak pulse power: PPP =150 W tp =8/20μs IEC 61000-4-2; level 4 (ESD) Low clamping voltage: VCL =20V IPP =15A IEC 61000-4-5 (surge); IPP =15A tp =8/20μs Low reverse leakage current: IRM <1nA Computers and peripherals High-speed data lines Audio and video equipment Parallel ports Communication systems
Table 1. Quick reference data
VRWM reverse standoff voltage
PESD3V3S2UQ - - 3.3 V
PESD5V0S2UQ - - 5 V
PESD12VS2UQ - - 12 V
PESD15VS2UQ - - 15 V
PESD24VS2UQ - - 24 V diode capacitance f=1 MHz; VR =0V
PESD3V3S2UQ - 200 275 pF
PESD5V0S2UQ - 150 215 pF
PESD12VS2UQ - 38 100 pF
PESD15VS2UQ - 32 70 pF
PESD24VS2UQ - 23 50 pF
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package Pinning information Ordering information Marking
Table 2. Pinning cathode 1 cathode 2 common anode
Table 3. Ordering information
PESD3V3S2UQ- plastic surface-mounted package; 3 leads SOT663
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Table 4. Marking codes
PESD3V3S2UQ E1
PESD5V0S2UQ E2
PESD12VS2UQ E3
PESD15VS2UQ E4
PESD24VS2UQ E5
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package Limiting values
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured across either pins 1 and 3 or pins 2 and 3.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured across either pins 1 and 3 or pins 2 and 3.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per diode
PPP peak pulse power tp =8/20μs [1][2] -150 W
IPP peak pulse current tp =8/20μs [1][2]
PESD3V3S2UQ - 15 A
PESD5V0S2UQ - 15 A
PESD12VS2UQ - 5 A
PESD15VS2UQ - 5 A
PESD24VS2UQ - 3 A
Per device junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Tamb =25 °C unless otherwise specified.
Per diode
VESD electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3S2UQ - 30 kV
PESD5V0S2UQ - 30 kV
PESD12VS2UQ - 30 kV
PESD15VS2UQ - 30 kV
PESD24VS2UQ - 23 kV
PESDxS2UQ series MIL-STD-883
(human body model)
-10 kV
Table 7. ESD standards compliance
Per diode
IEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package Characteristics
Table 8. Characteristics =25 °C unless otherwise specified.
Per diode
VRWM reverse standoff
voltage
PESD3V3S2UQ - - 3.3 V
PESD5V0S2UQ - - 5 V
PESD12VS2UQ - - 12 V
PESD15VS2UQ - - 15 V
PESD24VS2UQ - - 24 V
IRM reverse leakage current
PESD3V3S2UQ VRWM= 3.3V - 0.55 3 μA
PESD5V0S2UQ VRWM=5V - 50 300 nA
PESD12VS2UQ VRWM =12V - <1 30 nA
PESD15VS2UQ VRWM =15V - <1 50 nA
PESD24VS2UQ VRWM =24V - <1 50 nA
VBR breakdown voltage IR =5 mA
PESD3V3S2UQ 5.2 5.6 6.0 V
PESD5V0S2UQ 6.4 6.8 7.2 V
PESD12VS2UQ 14.7 15.0 15.3 V
PESD15VS2UQ 17.6 18.0 18.4 V
PESD24VS2UQ 26.5 27.0 27.5 V
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured across either pins 1 and 3 or pins 2 and 3. diode capacitance f=1 MHz; VR =0V
PESD3V3S2UQ - 200 275 pF
PESD5V0S2UQ - 150 215 pF
PESD12VS2UQ - 38 100 pF
PESD15VS2UQ - 32 70 pF
PESD24VS2UQ - 23 50 pF
VCL clamping voltage [1][2]
PESD3V3S2UQ IPP =1A - - 8 V
IPP =15A - - 20 V
PESD5V0S2UQ IPP =1A - - 9 V
IPP =15A - - 20 V
PESD12VS2UQ IPP =1A - - 19 V
IPP =5A - - 35 V
PESD15VS2UQ IPP =1A - - 23 V
IPP =5A - - 40 V
PESD24VS2UQ IPP =1A - - 36 V
IPP =3A - - 70 V
rdif differential resistance
PESD3V3S2UQ IR =5 mA - - 40 Ω
PESD5V0S2UQ IR =5 mA - - 15 Ω
PESD12VS2UQ IR =5 mA - - 15 Ω
PESD15VS2UQ IR =1 mA - - 225 Ω
PESD24VS2UQ IR =0.5 mA - - 300 Ω
Table 8. Characteristics …continued =25 °C unless otherwise specified.
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package
NXP Semiconductors PESDxS2UQ series
Double ESD protection diodes in SOT663 package

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