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PESD12VU1UT-PESD15VU1UT-PESD24VU1UT-PESD3V3U1UT-PESD5V0U1UT
Ultra low capacitance ESD protection diode in SOT23 package
Product profile1.1 General descriptionUltra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data[1] Measured from pin 1 to 2
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 02 — 20 August 2009 Product data sheet Unidirectional ESD protection of one line n ESD protection > 23 kV Ultra low diode capacitance: Cd = 0.6pF n IEC 61000-4-2; level 4 (ESD) Max. peak pulse power: PPP up to 200W n IEC 61000-4-5; (surge) Low clamping voltage 10/100/1000 Ethernet n Local Area Network (LAN) equipment FireWire n Computers and peripherals Communication systems n High-speed data lines
Table 1. Quick reference dataVRWM reverse stand-off voltage
PESD3V3U1UT - - 3.3 V
PESD5V0U1UT - - 5.0 V
PESD12VU1UT - - 12 V
PESD15VU1UT - - 15 V
PESD24VU1UT - - 24 V diode capacitance f = 1 MHz; VR =0V [1]- 0.6 1.5 pF
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning cathode ESD protection diode cathode compensation diode common anode
006aaa441
Table 3. Ordering informationPESD3V3U1UT - plastic surface mounted package; 3 leads SOT23
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Table 4. Marking codesPESD3V3U1UT *AP
PESD5V0U1UT *AQ
PESD12VU1UT *AR
PESD15VU1UT *AS
PESD24VU1UT *AT
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power 8/20μs [1]
PESD3V3U1UT - 80 W
PESD5V0U1UT - 80 W
PESD12VU1UT - 200 W
PESD15VU1UT - 200 W
PESD24VU1UT - 200 W
IPP peak pulse current 8/20μs [1]
PESD3V3U1UT - 5 A
PESD5V0U1UT - 5 A
PESD12VU1UT - 5 A
PESD15VU1UT - 5 A
PESD24VU1UT - 3 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 2
Table 6. ESD maximum ratingsVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3U1UT - 30 kV
PESD5V0U1UT - 30 kV
PESD12VU1UT - 30 kV
PESD15VU1UT - 30 kV
PESD24VU1UT - 23 kV
PESDxU1UT HBM MIL-STD-883 - 10 kV
Table 7. ESD standards complianceIEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD-883; class 3 > 4 kV
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package Characteristics[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified
VRWM reverse stand-off voltage
PESD3V3U1UT - - 3.3 V
PESD5V0U1UT - - 5.0 V
PESD12VU1UT - - 12 V
PESD15VU1UT - - 15 V
PESD24VU1UT - - 24 V
IRM reverse leakage current
PESD3V3U1UT VRWM = 3.3 V - 0.25 2 μA
PESD5V0U1UT VRWM = 5.0 V - 0.03 1 μA
PESD12VU1UT VRWM = 12 V - < 1 50 nA
PESD15VU1UT VRWM = 15 V - < 1 50 nA
PESD24VU1UT VRWM = 24 V - < 1 50 nA
VBR breakdown voltage IR = 5 mA [2]
PESD3V3U1UT 5.8 6.4 6.9 V
PESD5V0U1UT 7.0 7.6 8.2 V
PESD12VU1UT 14.2 15.0 16.7 V
PESD15VU1UT 17.1 18.9 20.3 V
PESD24VU1UT 25.4 27.8 30.3 V diode capacitance f = 1 MHz; VR = 0 V [2]- 0.6 1.5 pF
VCL clamping voltage [1][2]
PESD3V3U1UT IPP = 1 A - - 9 V
IPP = 5 A - - 20 V
PESD5V0U1UT IPP = 1 A - - 12 V
IPP = 5 A - - 21 V
PESD12VU1UT IPP = 1 A - - 23 V
IPP = 5 A - - 39 V
PESD15VU1UT IPP = 1 A - - 28 V
IPP = 5 A - - 53 V
PESD24VU1UT IPP = 1 A - - 40 V
IPP = 3 A - - 76 V
rdif differential resistance IR = 1 mA
PESD3V3U1UT - - 400 Ω
PESD5V0U1UT - - 80 Ω
PESD12VU1UT - - 200 Ω
PESD15VU1UT - - 225 Ω
PESD24VU1UT - - 300 Ω
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
NXP Semiconductors PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package Application informationThe PESDxU1UT series is designed for protection of high-speed datalines from damage
caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection
diode and an ultra low capacitance compensation diode to ensure an effective device
capacitanceas lowas 0.6pF. The PESDxU1UT series providesa surge capabilityofupto
200 W per line for an 8/20 μs waveform.
