PESD15VS2UQ ,Double ESD protection diodes in SOT663 packageAPPLICATIONSPINNING• Computers and peripheralsPIN DESCRIPTION• Communication systems1 cathode 1• Au ..
PESD15VS2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 packageAPPLICATIONSPINNING• Computers and peripheralsPIN DESCRIPTION• Communication systems1 cathode 1• Au ..
PESD15VS2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 package DISCRETE SEMICONDUCTORS DATA SHEETPESDxS2UT seriesDouble ESD protection diodes in SOT23 packagePro ..
PESD15VS2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 packageAPPLICATIONSPINNING• Computers and peripheralsPIN DESCRIPTION• Communication systems1 cathode 1• Au ..
PESD15VS4UD ,Quadruple ESD protection diode arrays in a SOT457 packagePESDxS4UD seriesQuadruple ESD protection diode arrays in a SOT457 packageRev. 02 — 21 August 2009 P ..
PESD15VS5UD ,Fivefold ESD protection diode arraysGeneral descriptionFivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-7 ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD15VS2UQ
Double ESD protection diodes in SOT663 package
Philips Semiconductors Product specification
Double ESD protection diodes
in SOT663 package PESDxS2UQ series
FEATURES Uni-directional ESD protection of up to two lines Max. peak pulse power: Ppp= 150 W at tp= 8/20μs Low clamping voltage: V(CL)R=20 V at Ipp =15A Low reverse leakage current: IRM <1nA ESD protection >30kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); Ipp=15 A at tp= 8/20 μs.
APPLICATIONS Computers and peripherals Communication systems Audio and video equipment High speed data lines Parallel ports.
DESCRIPTIONUni-directional double ESD protection diodesina SOT663
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note*=p: made in Hong Kong.=t: made in Malaysia.=W: made in China.
QUICK REFERENCE DATA
PINNING
Philips Semiconductors Product specification
Double ESD protection diodes
in SOT663 package PESDxS2UQ series
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Non-repetitive current pulse 8/20 μs exponential decaying waveform; see Fig.2. Measured across either pins 1 and 3 or pins 2 and 3.
Philips Semiconductors Product specification
Double ESD protection diodes
in SOT663 package PESDxS2UQ series
ESD maximum ratings
Notes Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
Philips Semiconductors Product specification
Double ESD protection diodes
in SOT663 package PESDxS2UQ series
ELECTRICAL CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
Double ESD protection diodes
in SOT663 package PESDxS2UQ series
Notes Non-repetitive current pulse 8/20 μs exponential decay waveform; see Fig.2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
Philips Semiconductors Product specification
Double ESD protection diodes
in SOT663 package PESDxS2UQ series
