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PESD24VS1UA
Unidirectional ESD protection diode
1. Product profile
1.1 General descriptionUnidirectional ElectroStatic Discharge (ESD) protection diode in a SOD323 (SC-76) very
small Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and other transients.
1.2 Features and benefits Unidirectional ESD protection of one line Max. peak pulse power: PPP =160W Ultra low leakage current: IRM <1nA ESD protection up to 23kV IEC 61000-4-2, level4 (ESD) IEC 61000-4-5 (surge); IPP =3A
1.3 Applications Computers and peripherals Communication systems Audio and video equipment Data lines Controller Area Network (CAN) bus protection
1.4 Quick reference data
2. Pinning information
PESD24VS1UA
Unidirectional ESD protection diode
Rev. 1 — 7 March 2011 Product data sheet
Table 1. Quick reference dataVRWM reverse standoff voltage - - 24 V diode capacitance VR =0V; f=1MHz - 23 50 pF
Table 2. Pinning cathode [1] anode
NXP Semiconductors PESD24VS1UA
Unidirectional ESD protection diode[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
Table 3. Ordering informationPESD24VS1UA SC-76 plastic surface-mounted package; 2 leads SOD323
Table 4. Marking codesPESD24VS1UA 2E
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power tp =8/20μs [1] -160 W
IPP peak pulse current tp =8/20μs [1] -3 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PESD24VS1UA
Unidirectional ESD protection diode[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. ESD maximum ratingsTamb =25 °C unless otherwise specified.
VESD electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1] -23 kV
MIL-STD-883
(human body model)
-10 kV
Table 7. ESD standards complianceIEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD24VS1UA
Unidirectional ESD protection diode
6. Characteristics[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
VRWM reverse standoff
voltage 24 V
IRM reverse leakage
current
VRWM =24V - <1 50 nA
VBR breakdown voltage IR=5 mA 26.5 27.0 27.5 V diode capacitance f=1 MHz; VR=0V - 23 50 pF
VCL clamping voltage [1][2]
IPP =1A - - 36 V
IPP =3A - - 70 V
rdyn dynamic resistance IR =10A [2][3] -1.53 - Ω
NXP Semiconductors PESD24VS1UA
Unidirectional ESD protection diodeNXP Semiconductors PESD24VS1UA
Unidirectional ESD protection diode
NXP Semiconductors PESD24VS1UA
Unidirectional ESD protection diode
7. Application informationThe PESD24VS1UA is designed for the protection of one unidirectional data or signal line
from the damage caused by ESD and surge pulses. The device may be used on lines
where the signal polarities are either positive or negative with respect to ground. The
PESD24VS1UA provides a surge capability of 160 W per line for an 8/20 μs waveform.
Circuit board layout and protection device placement:Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended: Place the PESD24VS1UA as close to the input terminal or connector as possible. The path length between the PESD24VS1UA and the protected line should be
minimized. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
