PESD5V0L5UV ,Low capacitance 5-fold ESD protection diode arrays in SOT666 packageFeaturesn ESD protection of up to five lines n Ultra low leakage current: I =5nARMn Low diode capaci ..
PESD5V0L5UY ,Low capacitance 5-fold ESD protection diode arrays in SOT363 packageGeneral descriptionLow capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection ..
PESD5V0L6US ,Low capacitance 6-fold ESD protection diode arraysApplications■ Computers and peripherals ■ High speed data lines■ Communication systems ■ Parallel p ..
PESD5V0S1BA ,Low capacitance bidirectional ESD protection diodesPESD5V0S1BA;PESD5V0S1BB;PESD5V0S1BLLow capacitance bidirectional ESD protection diodesRev. 04 — 20 ..
PESD5V0S1BB ,Low capacitance bidirectional ESD protection diodesLimiting valuesTable 6.
PESD5V0S1BB- ,Low capacitance bidirectional ESD protection diodesFeaturesn Bidirectional ESD protection of one line n ESD protection > 30 kVn Max. peak pulse power: ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD3V3L5UV-PESD3V3L5UY-PESD5V0L5UF-PESD5V0L5UV-PESD5V0L5UY
Low capacitance unidirectional fivefold ESD protection diode arrays
Product profile1.1 General descriptionLow capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arraysin small Surface-Mounted Device (SMD) plastic packages designedto protectupto
five unidirectional signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
PESDxL5UF; PESDxL5UV;
PESDxL5UY
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 02 — 8 January 2008 Product data sheet
Table 1. Product overviewPESD3V3L5UF SOT886 - MO-252 leadless ultra small
PESD5V0L5UF SOT886 - MO-252 leadless ultra small
PESD3V3L5UV SOT666 - - ultra small and flat lead
PESD5V0L5UV SOT666 - - ultra small and flat lead
PESD3V3L5UY SOT363 SC-88 - very small
PESD5V0L5UY SOT363 SC-88 - very small ESD protection of up to five lines n Ultra low leakage current: IRM =5nA Low diode capacitance n ESD protection up to20 kV Max. peak pulse power: PPP =25W n IEC 61000-4-2; level 4 (ESD) Low clamping voltage: VCL =12V n IEC 61000-4-5 (surge); IPP= 2.5A Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
1.4 Quick reference data Pinning information
Table 2. Quick reference dataTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY - 3.3 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY - 5.0 V diode capacitance f=1 MHz; VR =0V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY 2228pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY 1619pF
Table 3. Pinning
PESD3V3L5UF; PESD5V0L5UF cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4) cathode (diode5)
PESD3V3L5UV; PESD5V0L5UV cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4) cathode (diode5)
bottom view
2156123
006aaa159 356 6123
006aaa159
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESD3V3L5UY; PESD5V0L5UY cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4) cathode (diode5)
Table 3. Pinning …continued 6123
006aaa159
Table 4. Ordering informationPESD3V3L5UF XSON6 plastic extremely thin small outline package; leads; 6 terminals; body 1× 1.45× 0.5 mm
SOT886
PESD5V0L5UF
PESD3V3L5UV - plastic surface-mounted package; 6 leads SOT666
PESD5V0L5UV
PESD3V3L5UY SC-88 plastic surface-mounted package; 6 leads SOT363
PESD5V0L5UY
Table 5. Marking codesPESD3V3L5UF A1
PESD5V0L5UF A2
PESD3V3L5UV E1
PESD5V0L5UV E2
PESD3V3L5UY K3*
PESD5V0L5UY K4*
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin2.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power tp= 8/20μs [1][2] -25 W
IPP peak pulse current tp= 8/20μs [1][2]- 2.5 A
Per device junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratingsTamb =25 °C unless otherwise specified.
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -20 kV
MIL-STD-883 (human
body model)
-10 kV
Table 8. ESD standards compliance
Per diodeIEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays Characteristics
Table 9. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY - 3.3 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY - 5.0 V
IRM reverse leakage current
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
VRWM= 3.3V - 75 300 nA
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
VRWM= 5.0V - 5 25 nA
VBR breakdown voltage IR =1mA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
5.3 5.6 5.9 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
6.4 6.8 7.2 V
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin2. diode capacitance f=1 MHz; =0V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY 2228pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY 1619pF
VCL clamping voltage [1][2]
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP=1A --10 V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP= 2.5A - - 12 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP=1A --10 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP= 2.5A - - 12 V
rdif differential resistance IR =1mA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY - 200 Ω
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY - 100 Ω
Table 9. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
