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PHP28NQ15T
N-channel TrenchMOS standard level FET
PHP28NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 22 March 2010 Product data sheet Product profile
1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits Increased efficiency during switching
due to low body diode recovered
charge Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications Class-D audio amplifiers DC-to-AC inverters DC-to-DC convertors Switched-mode power supplies
1.4 Quick reference data Table 1. Quick referenceVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 150 V drain current Tj =25°C; VGS =10V;
see Figure 1 and 3 - 28.5 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 150 W
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =10A;
VDS =75V; Tj =25°C;
see Figure 12 and 11
-7.5 -nC
Static characteristicsRDSon drain-source
on-state resistance
VGS =10V; ID =18A; =25 °C; see Figure 9 and 10 5465mΩ
NXP Semiconductors PHP28NQ15T
N-channel TrenchMOS standard level FET Pinning information Ordering information Limiting values
Table 2. Pinning information gate
SOT78 (TO-220AB) drain source D mounting base; connected to
drain
Table 3. Ordering informationPHP28NQ15T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 150 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -150 V
VGS gate-source voltage -20 20 V drain current VGS =10 V; Tj =25°C; see Figure 1 and 3 -28.5 A
VGS =10 V; Tj= 100 °C; see Figure 1 -20.2 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -57.1 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -150 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 28.5 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 57.1 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10 V; Tj(init) =25 °C; ID =9.9 A; Vsup≤ 150V;
RGS =50 Ω; tp= 0.1 ms; unclamped
-100 mJ
NXP Semiconductors PHP28NQ15T
N-channel TrenchMOS standard level FET
NXP Semiconductors PHP28NQ15T
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 -- 1 K/W
Rth(j-a) thermal resistance from junction to
ambient
vertical in still air - 60 - K/W
NXP Semiconductors PHP28NQ15T
N-channel TrenchMOS standard level FET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =-55°C 135 - - V =250 µA; VGS =0V; Tj =25°C 150 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= -55 °C; see Figure 7
and 8 4.4 V =1mA; VDS = VGS; Tj =175 °C; see Figure 7
and 8 - V =1mA; VDS = VGS; Tj =25°C; see Figure 7
and 8 4V
IDSS drain leakage current VDS =120 V; VGS =0V; Tj =25°C - - 1 µA
VDS =120 V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =18A; Tj= 175 °C; see Figure 9
and 10 145 175 mΩ
VGS =10V; ID =18A; Tj =25°C; see Figure 9
and 10
-54 65 mΩ internal gate resistance
(AC)
f=1MHz; Tj =25°C - 1.1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =10A; VDS =75V; VGS =10V; Tj =25°C;
see Figure 11 and 12
-24 - nC
QGS gate-source charge ID =10A; VDS =75V; VGS =10V; Tj =25°C;
see Figure 12 and 11 -nC
QGD gate-drain charge - 7.5 - nC
VGS(pl) gate-source plateau
voltage =25A; VDS =75 V; Tj=25 °C; see Figure 11
and 12 -V
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; Tj =25°C;
see Figure 13 1250 - pF
Coss output capacitance - 185 - pF
Crss reverse transfer
capacitance
-55 - pF
td(on) turn-on delay time VDS =75V; RL =3 Ω; VGS =10V;
RG(ext) =5.6 Ω; Tj =25°C
-12 - ns rise time - 20 - ns
td(off) turn-off delay time VDS =75V; RL =3 Ω; VGS =10V; RG(ext) 5.6Ω; =25°C
-12 - ns fall time VDS =75V; RL =3 Ω; VGS =10V;
RG(ext) =5.6 Ω; Tj =25°C
-55 - ns
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj=25 °C; see Figure 14 - 0.87 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =0V;
VDS =25V; Tj =25°C
-110 -ns recovered charge - 170 - nC
NXP Semiconductors PHP28NQ15T
N-channel TrenchMOS standard level FETNXP Semiconductors PHP28NQ15T
N-channel TrenchMOS standard level FET
