PMBT3906 ,PNP switching transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PMBT3906YS ,40 V, 200 mA PNP/PNP general-purpose double transistorApplicationsn General-purpose switching and amplification1.4 Quick reference dataTable 2. Quick refe ..
PMBT3946YPN ,40 V, 200 mA NPN/PNP general-purpose double transistorApplicationsn General-purpose switching and amplification1.4 Quick reference dataTable 2. Quick refe ..
PMBT4401 ,NPN switching transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PMBT4403 ,PNP switching transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
PMBT5088 ,NPN general purpose transistor
PST597 , System Reset
PST600C , System Reset Monolithic IC
PST600C , System Reset Monolithic IC
PST600C , System Reset Monolithic IC
PST600E , System Reset Monolithic IC
PST600F , System Reset Monolithic IC
PMBT3906
PNP switching transistor
1. Product profile
1.1 General descriptionPNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMBT3904.
1.2 Features and benefits Collector-emitter voltage VCEO= −40V Collector current capability IC= −200 mA
1.3 Applications General amplification and switching
1.4 Quick reference data
2. Pinning information
PMBT3906
PNP switching transistor
Rev. 06 — 2 March 2010 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - −40 V collector current - - −200 mA
Table 2. Pinning1base
2emitter collector
NXP Semiconductors PMBT3906
PNP switching transistor
3. Ordering information
4. Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Table 3. Ordering informationPMBT3906 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesPMBT3906 *2A
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6V collector current - −200 mA
ICM peak collector current - −200 mA
IBM peak base current - −100 mA
Ptot total power dissipation Tamb≤25°C [1] -250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PMBT3906
PNP switching transistor
6. Thermal characteristics[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 500 K/W
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB= −30 V; IE =0A - - −50 nA
IEBO emitter-base cut-off
current
VEB= −6V; IC =0A - - −50 nA
hFE DC current gain VCE= −1V= −0.1 mA 60 - -= −1mA 80 - -= −10 mA 100 - 300= −50 mA 60 - -= −100 mA 30 - -
VCEsat collector-emitter
saturation voltage= −10 mA; IB= −1mA - - −250 mV= −50 mA; IB= −5mA - - −400 mV
VBEsat base-emitter
saturation voltage= −10 mA; IB= −1mA - - −850 mV= −50 mA; IB= −5mA - - −950 mV delay time ICon= −10 mA;
IBon= −1mA;
IBoff =1mA 35 ns rise time - - 35 ns
ton turn-on time - - 70 ns storage time - - 225 ns fall time - - 75 ns
toff turn-off time - - 300 ns transition frequency VCE= −20V; = −10 mA;
f=100MHz
250 - - MHz collector capacitance VCB= −5V; IE =ie =0A;
f=1MHz 4.5 pF emitter capacitance VEB= −500 mV; =ic =0A; f=1MHz 10 pF noise figure IC= −100 μA;
VCE= −5V; RS =1kΩ; =10Hzto 15.7 kHz 4 dB
NXP Semiconductors PMBT3906
PNP switching transistor
NXP Semiconductors PMBT3906
PNP switching transistorNXP Semiconductors PMBT3906
PNP switching transistor
8. Test information
