PMG45UN Fast Delivery |IC PHOENIX CO.,LIMITED

PMG45UN ,20 V, single N-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• Low-side loadswitchSwitching circuits•1.4 Quick ..
PMG85XP ,20 V, 2 A P-channel Trench MOSFETApplications Relay driver High-side loadswitch High-speed line driver Switching circuits1.4 Qui ..
PMGD130UN ,20 V, dual N-channel Trench MOSFETApplications Relay driver Low-side loadswitch High-speed line driver Switching sircuits1.4 Quic ..
PMGD175XN ,30 V, dual N-channel Trench MOSFETApplications Relay driver Low-side loadswitch High-speed line driver Switching sircuits1.4 Quic ..
PMGD280UN ,Dual N-channel uTrenchmos (tm) ultra low level FET
PMGD280UN ,Dual N-channel uTrenchmos (tm) ultra low level FET
PST993E , System Reset
PST993I , System Reset
PST994 , System Reset
PST994 , System Reset
PST994I , System Reset
PT100MF0MP , Surface Mount Type, Opaque Resin Phototransistor

PMG45UN
20 V, single N-channel Trench MOSFET
PMG45UN
20 V, single N-channel Trench MOSFET13 November 2012 Product data sheet Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT363 (SC-88) smallSurface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low threshold voltage• Very fast switching• Trench MOSFET technology
1.3 Applications Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 20 V
VGS gate-source voltage
Tj = 25 °C - 8 V drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 3.3 A
Static characteristics
RDSon drain-source on-stateresistance VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 45 55 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol D drain D drain G gate S source D drain D drain 3256
TSSOP6 (SOT363)
017aaa253 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMG45UN TSSOP6 plastic surface-mounted package; 6 leads SOT363 Marking
Table 4. Marking codes
Type number Marking code
[1]
PMG45UN U5%
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 20 V
VGS gate-source voltage
Tj = 25 °C 8 V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 3.3 A
VGS = 4.5 V; Tamb = 25 °C [1] - 3 A drain current
VGS = 4.5 V; Tamb = 100 °C [1] - 1.9 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 12 A
[2] - 375 mWPtot total power dissipation Tamb = 25 °C
[1] - 715 mW
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit
Tsp = 25 °C - 4350 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - 0.8 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as afunction of junction temperature (°C)-75 17512525 75-25
017aaa124
Ider(%)
Fig. 2. Normalized continuous drain current as afunction of junction temperature
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
017aaa851
102(A)
VDS (V)10-1 1031021
Limit RDSon = VDS/ID
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 1 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 289 332 K/W
[2] - 152 175 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air
[3] - 117 145 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint 25 29 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 , t ≤ 5 s.
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
017aaa852
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa853
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V 1 V 1 µA 100 nA
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA
VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 45 55 mΩ
VGS = 4.5 V; ID = 3 A; Tj = 150 °C - 66 81 mΩ
VGS = 2.5 V; ID = 2.5 A; Tj = 25 °C - 58 76 mΩ
RDSon drain-source on-stateresistance
VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C - 85 125 mΩ
gfs forward
transconductance
VDS = 10 V; ID = 3 A; Tj = 25 °C - 11.2 - S
Dynamic characteristics
QG(tot) total gate charge - 2.2 3.3 nC
QGS gate-source charge - 0.32 - nC
QGD gate-drain charge
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C 0.56 - nC
Ciss input capacitance - 184 - pF
Coss output capacitance - 51 - pF
Crss reverse transfercapacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 29 - pF
td(on) turn-on delay time - 8 - ns rise time - 30 - ns
td(off) turn-off delay time - 30 - ns fall time
VDS = 10 V; ID = 3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C 26 - ns
Source-drain diode
VSD source-drain voltage IS = 0.8 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
017aaa854(A)
4.5V 2.5V
2.2VV
017aaa855-4
10-3(A)
VGS (V)0 1.251.000.50 0.750.25
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function ofgate-source voltage
NXP Semiconductors PMG45UN
20 V, single N-channel Trench MOSFET
017aaa856
ID (A)0 1284
RDSon(mΩ)
1.6V
1.7V
1.8V
1.9VV
VGS=4.5V
2.2V
2.5V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values
VGS (V)0 1084 62
017aaa857
RDSon(mΩ)=150°C=25°C
ID = 3 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
VGS (V)0 321
017aaa858(A)=150°C Tj=25°C
VDS > ID × RDSon
Tj (°C)-60 1801200 60
017aaa859
Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typical
values

Partno	Mfg	Dc	Qty	Available	Descript
PMG45UN	NXP/PH	N/a	10000	avai	20 V, single N-channel Trench MOSFET