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PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver Low-side load switch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Pinning information
PMN35EN
30 V, 5.1 A N-channel Trench MOSFET
Rev. 1 — 20 July 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C --30 V
VGS gate-source voltage -20 - 20 V drain current VGS =10V; Tamb =25°C [1] --5.1 A
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =5.1 A; Tj=25°C - 25 31 mΩ
Table 2. Pinning information
NXP Semiconductors PMN35EN
30 V, 5.1 A N-channel Trench MOSFET Ordering information Marking Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 3. Ordering informationPMN35EN TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPMN35EN SH
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - 30 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tamb =25°C [1] -5.1 A
VGS =10V; Tamb= 100°C [1] -3.2 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 24 A
Ptot total power dissipation Tamb =25°C [2] - 500 mW
[1] - 1250 mW
Tsp=25°C - 4170 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] -1.3 A
NXP Semiconductors PMN35EN
30 V, 5.1 A N-channel Trench MOSFETNXP Semiconductors PMN35EN
30 V, 5.1 A N-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 215 250 K/W
[2] - 85 100 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 2030K/W
NXP Semiconductors PMN35EN
30 V, 5.1 A N-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj=25°C 30 --V
VGSth gate-source threshold
voltage =250 µA; VDS =VGS; Tj =25°C 1 1.5 2.5 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C --1 µA
VDS =30V; VGS =0V; Tj= 150°C --10 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - - 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =5.1 A; Tj=25°C - 25 31 mΩ
VGS =10V; ID =5.1 A; Tj= 150°C - 3948mΩ
VGS =4.5 V; ID= 4.3 A; Tj=25°C - 32 43 mΩ
gfs forward
transconductance
VDS =10V; ID= 5.1 A; Tj =25°C - 14 - S
Dynamic characteristicsQG(tot) total gate charge VDS =15V; ID= 5.1 A; VGS =10V; =25°C
-6.2 9.3 nC
QGS gate-source charge - 0.9 - nC
QGD gate-drain charge - 1 - nC
Ciss input capacitance VDS =15V; f=1MHz; VGS =0V; =25°C 334 - pF
Coss output capacitance - 81 - pF
Crss reverse transfer
capacitance
-40 -pF
td(on) turn-on delay time VDS =15V; VGS =10V; RG(ext) =6Ω; =25°C; ID =5.1A -ns rise time - 15 - ns
td(off) turn-off delay time - 53 - ns fall time - 24 - ns
Source-drain diodeVSD source-drain voltage IS= 1.3 A; VGS =0V; Tj=25°C - 0.75 1.2 V
