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Partno	Mfg	Dc	Qty	Available	Descript
PMV160UP	NXP/PH	N/a	10000	avai	20 V, 1.2 A P-channel Trench MOSFET

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PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Product profile1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits 1.8 V RDSon rated Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Pinning information
PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
Rev. 2 — 6 December 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj=25°C ---20 V
VGS gate-source voltage -8 - 8 V drain current VGS =-4.5V; Tamb 25°C [1] ---1.2 A
Static characteristics
RDSon drain-source on-state
resistance
VGS =-4.5V; ID =-1.2A; Tj=25°C - 170 210 mΩ
Table 2. Pinning information
NXP Semiconductors PMV160UP
20 V, 1.2 A P-channel Trench MOSFET Ordering information Marking
[1] % = placeholder for manufacturing site code
Table 3. Ordering information
PMV160UP TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
PMV160UP NH%
NXP Semiconductors PMV160UP
20 V, 1.2 A P-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -20 V
VGS gate-source voltage -8 8 V drain current VGS =-4.5 V; Tamb 25°C [1] --1.2 A
VGS =-4.5 V; Tamb =100°C [1] --0.8 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -4 A
Ptot total power dissipation Tamb =25°C [2] - 335 mW
[1] - 480 mW
Tsp=25°C - 2170 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --0.5 A
NXP Semiconductors PMV160UP
20 V, 1.2 A P-channel Trench MOSFET
NXP Semiconductors PMV160UP
20 V, 1.2 A P-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 325 374 K/W
[2] - 227 260 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 5060K/W

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