PMV48XP Fast Delivery |IC PHOENIX CO.,LIMITED

Home › P › P27 > PMV48XP,20 V, 3.5 A P-channel Trench MOSFET

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
PMV48XP	NXP	N/a	33000	avai	20 V, 3.5 A P-channel Trench MOSFET
PMV48XP	NXP/PH	N/a	10000	avai	20 V, 3.5 A P-channel Trench MOSFET

PMV48XP ,20 V, 3.5 A P-channel Trench MOSFETApplications High-side loadswitch Relay driver High-speed line driver Switching circuits1.4 Qui ..
PMV48XP ,20 V, 3.5 A P-channel Trench MOSFETGeneral descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-23 ..
PMV50UPE ,20 V, single P-channel Trench MOSFETApplicationsRelay driver•• High-side loadswitchSwitching circuits•1.4 Quick reference dataTable 1. ..
PMV56XN ,uTrenchmos (tm) extremely low level FET
PMV56XN ,uTrenchmos (tm) extremely low level FET
PMV56XN ,uTrenchmos (tm) extremely low level FET
PT2261A , Remote Control Encoder　
PT2262-IR , Remote Control Encoder
PT2262-IRS , Remote Control Encoder
PT2262S , Remote Control Encoder
PT2262S , Remote Control Encoder
PT2262-S , Remote Control Encoder

PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Product profile1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching
1.3 Applications High-side loadswitch High-speed line driver Relay driver Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010 Product data sheet
Table 1. Quick reference data
VDS drain-source
voltage
Tamb=25°C ---20 V
VGS gate-source
voltage
-12 - 12 V drain current VGS =-4.5V; Tamb =25°C [1] ---3.5 A
Static characteristics
RDSon drain-source
on-state
resistance
VGS =-4.5V; ID =-2.4A;
pulsed; tp≤ 300 µs; δ≤ 0.01; =25°C 4855mΩ
NXP Semiconductors PMV48XP
20 V, 3.5 A P-channel Trench MOSFET Pinning information Ordering information Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering information
PMV48XP TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
PMV48XP KN%
NXP Semiconductors PMV48XP
20 V, 3.5 A P-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25°C - -20 V
VGS gate-source voltage -12 12 V drain current VGS =-4.5 V; Tamb =25°C [1] --3.5 A
VGS =-4.5 V; Tamb =100°C [1] --2.2 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -14 A
Ptot total power dissipation Tamb =25°C [2] - 510 mW
[1] - 930 mW
Tsp=25°C - 4150 mW junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --1 A
NXP Semiconductors PMV48XP
20 V, 3.5 A P-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 213 245 K/W
[2] - 117 135 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 2530K/W
NXP Semiconductors PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
NXP Semiconductors PMV48XP
20 V, 3.5 A P-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =-250µA; VGS =0V; Tj=25°C -20 --V
VGSth gate-source threshold
voltage =-250µA; VDS =VGS; Tj=25°C -0.75 -1 -1.25 V
IDSS drain leakage current VDS =-20 V; VGS =0V; Tamb=25°C ---1 µA
IGSS gate leakage current VGS =-12 V; VDS =0V; Tj=25°C - - -100 nA
RDSon drain-source on-state
resistance
VGS =-4.5V; ID= -2.4 A; pulsed; ≤ 300 µs; δ≤ 0.01 ; Tj =25°C 4855mΩ
VGS =-4.5V; ID= -2.4 A; pulsed; ≤ 300 µs; δ≤ 0.01 ; Tj= 150°C 7080mΩ
VGS =-2.5V; ID=-2 A; pulsed; ≤ 300 µs; δ≤ 0.01 ; Tj =25°C 7181mΩ
gfs forward
transconductance
VDS =-12 V; ID=-2 A; pulsed; ≤ 300 µs; δ≤ 0.01 ; Tj =25°C
-12 - S
Dynamic characteristics
QG(tot) total gate charge ID =-1A; VDS =-10 V; VGS =-4.5V; =25°C
-8.5 11 nC
QGS gate-source charge - 1.8 - nC
QGD gate-drain charge - 1.8 - nC
Ciss input capacitance VGS =0V; VDS= -10 V; f=1 MHz; =25°C 1000 - pF
Coss output capacitance - 130 - pF
Crss reverse transfer
capacitance
-90 - pF
td(on) turn-on delay time VDS =-10 V; VGS =-4.5V; RG(ext) =6Ω; =25°C; ID =-1A
-11 - ns rise time - 13 - ns
td(off) turn-off delay time - 61 - ns fall time - 23 - ns
Source-drain diode
VSD source-drain voltage IS =-2.4A; VGS =0V; Tj =25°C; ≤ 300 µs; δ≤ 0.01 -0.82 -1.2 V
NXP Semiconductors PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
NXP Semiconductors PMV48XP
20 V, 3.5 A P-channel Trench MOSFET

TEL:86-533-2716050 FAX:86-533-2716790