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PN100ASNCN/a5000avaiNPN General Purpose Amplifier
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PN100A ,NPN General Purpose AmplifierPN100 / MMBT100 / PN100A / MMBT100APN100 MMBT100PN100A MMBT100ACEC TO-92BBSOT-23EMark: NA / NA1NPN ..
PN100A ,NPN General Purpose Amplifierapplicationsat collector currents to 300 mA. Sourced from Process 10.Absolute Maximum Ratings* ..
PN100A ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics T = 25°C un ..
PN200A ,PNP General Purpose AmplifierPN200 / MMBT200 / PN200A / MMBT200APN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP ..
PN200A ,PNP General Purpose Amplifierapplicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* ..
PN200A ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
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PN100A
NPN General Purpose Amplifier
PN100 / MMBT100 / PN100A / MMBT100A PN100 MMBT100 PN100A MMBT100A C E C TO-92 B B SOT-23 E Mark: NA / NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V V Collector-Base Voltage 75 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units PN100 *MMBT100 PN100A *MMBT100A P Total Device Dissipation 625 350 mW D 5.0 2.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC Thermal Resistance, Junction to Ambient 200 357 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  1998
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