PN200A ,PNP General Purpose AmplifierPN200 / MMBT200 / PN200A / MMBT200APN200 MMBT200PN200A MMBT200ACEC TO-92SOT-23 BBEMark: N2 / N2APNP ..
PN200A ,PNP General Purpose Amplifierapplicationsat collector currents to 300 mA. Sourced from Process 68.Absolute Maximum Ratings* ..
PN200A ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
PN-202S ,Opto-Electronic DeviceAbsolute Maximum Ratings (Ta = 25˚C)Parameter Symbol Ratings Unit1Collector to emitter voltage V 20 ..
PN2221 ,NPN small signal general purpose amplifier & switch.applications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junc ..
PN2222 , 0.625W Switching NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 35 hFE.PN2222PN2222General Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silico ..
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PN200A
PNP General Purpose Amplifier
PN200 / MMBT200 / PN200A / MMBT200A PN200 MMBT200 PN200A MMBT200A C E C TO-92 SOT-23 B B E Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6.0 V EBO IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN200 *MMBT200 PN200A *MMBT200A P Total Device Dissipation 625 350 mW D 5.0 2.8 Derate above 25°C mW/°C Thermal Resistance, Junction to Case 83.3 R °C/W θJC Thermal Resistance, Junction to Ambient 200 357 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997
