PN3638 ,PNP General Purpose AmplifierPN3638 / PN3638ADiscrete POWER & SignalTechnologiesPN3638PN3638AC TO-92BEPNP General Purpose Amplif ..
PN3638 ,PNP General Purpose AmplifierPN3638 / PN3638ADiscrete POWER & SignalTechnologiesPN3638PN3638AC TO-92BEPNP General Purpose Amplif ..
PN3638 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN3638A ,Leaded Small Signal Transistor General Purpose
PN3638A ,Leaded Small Signal Transistor General Purpose
PN3638A ,Leaded Small Signal Transistor General Purpose
PT2323 , 6-Ch Audio Selector
PT2323 , 6-Ch Audio Selector
PT2323 , 6-Ch Audio Selector
PT2323-S , 6-Ch Audio Selector
PT2323-S , 6-Ch Audio Selector
PT2332-X , 2.2W×2 Class-D Audio Power Amplifier
PN3638
PNP General Purpose Amplifier
PN3638 / PN3638A Discrete POWER & Signal Technologies PN3638 PN3638A C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 25 V CBO VEBO Emitter-Base Voltage 4.9 V IC Collector Current - Continuous 800 mA Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN3638/A P Total Device Dissipation 625 mW D ° ° Derate above 25 C 5.0 mW/ C Thermal Resistance, Junction to Case 83.3 ° RθJC C/W Rθ Thermal Resistance, Junction to Ambient 200 °C/W JA 1997
