PN4141 ,NPN General Purpose AmplifierPN4141Discrete POWER & SignalTechnologiesPN4141TO-92CBENPN General Purpose AmplifierThis device is ..
PN4141 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN4143 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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PN4248 ,PNP Low Level Low Noise Amplifiers_ ‘FAIRCHILD SEMICONDUCTOR
5L1 DEIBHE‘IEW 0027435 7 Ill"
3469674 FA1RCH1l-D SEMICONDUCTOR 840 2 ..
PN4248 ,PNP Low Level Low Noise AmplifiersELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
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PN4141
NPN General Purpose Amplifier
PN4141 Discrete POWER & Signal Technologies PN4141 TO-92 C B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO VCBO Collector-Base Voltage 60 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN4141 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
