PN4250 ,PNP Low Level Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN4250 ,PNP Low Level AmplifierPN4250Discrete POWER & SignalTechnologiesPN4250TO-92CBEPNP General Purpose AmplifierThis device is ..
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PN4250 ,PNP Low Level Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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PN4250
PNP Low Level Amplifier
PN4250 Discrete POWER & Signal Technologies PN4250 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 °C TJ, Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN4250 P Total Device Dissipation 625 mW D ° 5.0 ° Derate above 25 C mW/ C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W Rθ JA 1997
