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PRTR5V0U4YNXPN/a114615avaiIntegrated quad ultra-low capacitance ESD protection


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PRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection
Product profile1.1 General description
The PRTR5V0U4Y is designed to protect Input/Output (I/O) ports that are sensitive to
capacitive load, such as USB 2.0, Ethernet and DVI from destruction by ElectroStatic
Discharge (ESD). It provides protection to downstream signal and supply components
from ESD voltages as high as ±8 kV (contact discharge).
The PRTR5V0U4Y incorporates four pairs of ultra-low capacitance rail-to-rail diodes plus Zener diode. The rail-to-rail diodes are connectedto the Zener diode which allows ESD
protectiontobe independentof supply voltage. The PRTR5V0U4Yis fabricated using thin
film-on-silicon technology integrating four ultra-low capacitance rail-to-rail ESD protection
diodes in a miniature 6-lead SOT363 package.
1.2 Features
Pb-free and RoHS compliant ESD protection compliant to IEC 61000-4-2 level 4, ±8 kV contact discharge Four ultra-low input capacitance (1 pF typical) rail-to-rail ESD protection diodes Low-voltage clamping due to integrated Zener diode Small 6-lead SOT363 package
1.3 Applications
General-purpose downstream ESD protection high frequency analog signals and
high-speed serial data transmission for ports inside: Cellular and PCS mobile handsets PC-/notebook USB 2.0/IEEE 1394 ports DVI/HDMI interfaces Cordless telephones Wireless data (WAN/LAN) systems PDAs
PRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection
Rev. 01 — 8 May 2008 Product data sheet
NXP Semiconductors PRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection Pinning information Ordering information Limiting values Recommended operating conditions
Table 1. Pinning
ESD protection I/O 1 ground (GND) ESD protection I/O 2 ESD protection I/O 3 supply voltage (VCC) ESD protection I/O 4
001aag273
Table 2. Ordering information

PRTR5V0U4Y SC-88 plastic surface-mounted package; 6 leads SOT363
Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). input voltage −0.5 +5.5 V
Vesd electrostatic discharge
voltage
all pins;IEC 61000-4-2;
level 4
contact discharge −8+8 kV
air discharge −15 +15 kV
Tstg storage temperature −55 +125 °C
Table 4. Operating conditions

Tamb ambient temperature −40 +85 °C
NXP Semiconductors PRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection Characteristics Application information
7.1 IEEE 1394a/b protection

The PRTR5V0U4Y is optimized to protect both the IEEE 1394 physical layer and the
IEEE 1394 connector ports against ESD.
Table 5. Characteristics

Tamb =25 °C unless otherwise specified.
C(I/O-GND) input/output to ground
capacitance
pins 1, 3, 4 and 6; VI = 0 V; f = 1 MHz;
VCC= 3.0 V 1.0 - pF
ILR reverse leakage current pins 1, 3, 4 and 6 to ground; VI = 3.0 V - - 100 nA
VBR breakdown voltage Zener diode; I = 1 mA 6 - 9 V forward voltage - 0.7 - V
NXP Semiconductors PRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection
7.2 Universal serial bus 2.0 protection

The PRTR5V0U4Yis optimizedto protect USB 2.0 ports withor without OTG functionality
against ESD.
7.3 Universal SIM-card protection

The PRTR5V0U4Y protects the SIM-card interfaces against ESD.
NXP Semiconductors PRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection
7.4 Gigabit Ethernet transceiver protection

The PRTR5V0U4Y protects the gigabit Ethernet transceiver against ESD.
NXP Semiconductors PRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection
7.5 Universal microSD/TransFlash and SD-memory card protection

The PRTR5V0U4Y protects each data line of the microSD/TransFlash device against
ESD.
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