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PSMN008-75B-PSMN008-75P
N-channel enhancement mode field-effect transistor
PSMN008-75P; PSMN008-75BN-channel enhancement mode field-effect transistor
Rev. 01 — 18 September 2000 Product specification DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PSMN008-75P in SOT78
PSMN008-75B in SOT404 (D2 -PAK).
Features Fast switching Low on-state resistance Avalanche ruggedness rated.
Applications DC to DC converters Uninterruptable power supplies.
Pinning information[1] It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol gate (g)
SOT78 SOT404 (D2- PAK) drain (d) [1] source (s) connected to
drain (d)
MBK106
13MBK116
MBB076
Philips Semiconductors PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to175°C − 75 V drain current (DC) Tmb =25 °C; VGS =10V − 75 A
Ptot total power dissipation Tmb =25°C − 230 W junction temperature − 175 °C
RDSon drain-source on-state resistance VGS =10V; ID=25A 7.9 8.5 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to175°C − 75 V
VDGR drain-gate voltage (DC) Tj =25to175 °C; RGS =20kΩ− 75 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3 75 A
Tmb= 100 °C; VGS =10V;
Figure2 and3 75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure2 and3 240 A
Ptot total power dissipation Tmb =25 °C; Figure1 − 230 W
Tstg storage temperature −55 +175 °C operating junction temperature −55 +75 °C
Source-drain diode source (diode forward) current
(DC)
Tmb =25°C − 75 A
ISM peak source (diode forward)
current
Tmb =25 °C; pulsed; tp≤10μs − 240 A
Avalanche ruggednessEAS non-repetitive avalanche energy unclamped inductive load;ID =75A;= 0.1 ms; VDD≤15V;
RGS =50 Ω; VGS=10 V; starting =25 °C; Figure4 360 mJ
IAS non-repetitive avalanche current unclamped inductive load;
VDD≤15 V; RGS =50Ω;
VGS =10V; Figure4 75 A
Philips Semiconductors PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
Figure5 0.65 K/W
Rth(j-amb) thermal resistance from junction to ambient SOT78 package; vertical in still air 60 K/W
SOT404 package; mounted on
printed circuit board; minimum
footprint. K/W
Philips Semiconductors PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 250 μA; VGS=0V 75 90 − V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure10 =25 °C2 3 4 V= 175 °C1 −− V
IDSS drain-source leakage current VGS =0V; VDS =75V =25°C − 0.05 10 μA= 175°C −− 500 μA
IGSS gate-source leakage current VDS =0V; VGS= ±20V − 4 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure8 and9 =25oC − 7.9 8.5 mΩ= 175°C −− 20 mΩ
Dynamic characteristicsQg(tot) total gate charge ID=75 A; VDS =60V;
VGS =10V; Figure15 115 − nC
Qgs gate-source charge − 21 − nC
Qgd gate-drain (Miller) charge − 50 − nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure13 4.7 − nF
Coss output capacitance − 760 − pF
Crss reverse transfer capacitance − 400 − pF
td(on) turn-on delay time VDD= 37.5 V; RD= 1.5Ω;
VGS =10V; RG =10Ω 18 − ns turn-off rise time − 80 − ns
td(off) turn-off delay time − 170 − ns turn-off fall time − 100 − ns
Source-drain diodeVSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure14 0.8 1.2 V
trr reverse recovery time IS=5 A; dIS/dt= −100 A/μs;
VGS =0V; VR =30V 80 − ns recovered charge − 227 − nC
Philips Semiconductors PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN008-75P; PSMN008-75B
N-channel enhancement mode field-effect transistor
