IC Phoenix
 
Home ›  P › P31 > PSMN012-80PS,N-channel 80 V 11 m鈩?standard level MOSFET
PSMN012-80PS Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
PSMN012-80PS |PSMN01280PSNXPN/a5000avaiN-channel 80 V 11 m鈩?standard level MOSFET
PSMN012-80PS |PSMN01280PSNXP/PHN/a10000avaiN-channel 80 V 11 m鈩?standard level MOSFET


PSMN012-80PS ,N-channel 80 V 11 m鈩?standard level MOSFETApplications„ DC-to-DC converters„ Motor control„ Load switching„ Server power supplies1.4 Quick re ..
PSMN012-80PS ,N-channel 80 V 11 m鈩?standard level MOSFETGeneral descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 °C. This produ ..
PSMN013-100BS ,N-channel 100V 13.9m鈩?standard level MOSFET in D2PAKApplicationsDC-to-DC converters•• Load switchingMotor control•• Server power supplies4. Quick refer ..
PSMN013-100ES ,N-channel 100V 13.9m鈩?standard level MOSFET in I2PAK.Applications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN013-100PS ,N-channel 100V 13.9m鈩?standard level MOSFET in TO220.ApplicationsDC-to-DC converters•• Load switchingMotor control•• Server power supplies1.4 Quick refe ..
PSMN013-100PS ,N-channel 100V 13.9m鈩?standard level MOSFET in TO220.General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product ..
QL3025-1PQ208C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-1PQ208I , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-2PF144C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-2PF144C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-2PQ208C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-3PF144C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density

PSMN012-80PS
N-channel 80 V 11 m鈩?standard level MOSFET
PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
Rev. 02 — 25 June 2009 Product data sheet Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
[1] Measured 3 mm from package.
Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 80 V drain current Tmb =25°C; VGS =10V;
see Figure 1
--74 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 148 W
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A;
VDS=40 V; see Figure 14;
see Figure 15
-9.4 -nC
Static characteristics
RDSon drain-source
on-state resistance
VGS =10V; ID =15A; =25°C;
[1] -9 11 mΩ
NXP Semiconductors PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET Pinning information Ordering information
Table 2. Pinning information gate
SOT78
(TO-220AB; SC-46) drain source D mounting base; connected to
drain
Table 3. Ordering information
PSMN012-80PS TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -52 A
VGS =10V; Tmb =25°C; see Figure 1 -74 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -295 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -148 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 74 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 295 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =74A; Vsup≤80V;
RGS =50 Ω; unclamped
-100 mJ
NXP Semiconductors PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 -0.65 1 K/W
NXP Semiconductors PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =-55°C 73 - - V =250 µA; VGS =0V; Tj =25°C 80 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= 175 °C;
see Figure 11; see Figure 12 - V =1mA; VDS = VGS; Tj =-55 °C;
see Figure 11; see Figure 12
--4.6 V =1mA; VDS = VGS; Tj =25°C;
see Figure 11; see Figure 12
234 V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C --3 µA
VDS =80V; VGS =0V; Tj= 125°C --60 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
VGS =20V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 13
--18 mΩ
VGS =10V; ID =15A; Tj =25°C [2] -9 11 mΩ internal gate resistance
(AC)
f=1MHz - 0.97 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =0A; VDS =0V; VGS =10V - 36 - nC =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-43 - nC
QGS gate-source charge ID =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-12 - nC
QGS(th) pre-threshold
gate-source charge - nC
QGS(th-pl) post-threshold
gate-source charge - nC
QGD gate-drain charge - 9.4 - nC
VGS(pl) gate-source plateau
voltage
VDS =40V - 4.5 - V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 2782 - pF
Coss output capacitance - 384 - pF
Crss reverse transfer
capacitance 162 - pF
td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =10V;
RG(ext) =4.7Ω
-19 - ns rise time - 16 - ns
td(off) turn-off delay time - 33 - ns fall time - 6 - ns
NXP Semiconductors PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17 0.86 1.2 V
trr reverse recovery time IS =50A; dIS/dt= 100 A/µs; VGS =0V;
VDS =40V
-45 - ns recovered charge - 64 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
ic,good price

TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED