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PSMN013-100PS
N-channel 100V 13.9m鈩?standard level MOSFET in TO220.
PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.10 August 2012 Product data sheet Product profile
1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.
1.2 Features and benefits High efficiency due to low switching and conduction losses• Improved dynamic avalanche performance• Suitable for standard level gate drive
1.3 Applications DC-to-DC converters• Load switching• Motor control• Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 68 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 170 W junction temperature -55 - 175 °C
Static characteristicsVGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12 19.4 25 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13
[2] - 10.8 13.9 mΩ
Dynamic characteristicsQGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 50 V; 17 - nC
NXP Semiconductors PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Symbol Parameter Conditions Min Typ Max UnitQG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15 59 - nC
Avalanche ruggednessEDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω - 128 mJ
[1] Continuous current is limited by package[2] Measured 3 mm from package.
Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D mounting base; connected to
drain2
TO-220AB (SOT78)mbb076
Ordering information
Table 3. Ordering information
PackageType number
Name Description VersionPSMN013-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB SOT78
Marking
Table 4. Marking codes
Type number Marking codePSMN013-100PS PSMN013-100PS
NXP Semiconductors PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220. Limiting values
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 47 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 68 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 272 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 170 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 68 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 272 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω 128 mJ
[1] Continuous current is limited by package
NXP Semiconductors PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.003aac512 50 100 150 200Tmb(°C)
(A)
Fig. 1. Continuous drain current as a function of
mounting base temperatureTmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature003aae168
10-123 10 102 103VDS(V)
(A) Limit RDSon= VDS/IDms1ms
tp=10µs
100µs
100ms
Max Unit 0.9 K/W
NXP Semiconductors PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Symbol Parameter Conditions Min Typ Max UnitRth(j-a) thermal resistancefrom junction to
ambient
vertical in free air - 60 - K/W
003aad575-4-3-2-1
1e-6 10-5 10-4 10-3 10-2 10-1 1 10tp(s)
Zth (j-mb)(K/W)
single shot
0.20.5δ=
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typicalvalues Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristicsID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - VV(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11 3 4 V
VGS(th) gate-source thresholdvoltage 4.6 V 100 µA 2 µA 100 nA 100 nA 25 mΩ
NXP Semiconductors PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Symbol Parameter Conditions Min Typ Max UnitVGS = 10 V; ID = 15 A; Tj = 175 °C;
Fig. 12 29.5 38.9 mΩ
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13
[1] - 10.8 13.9 mΩ internal gateresistance (AC) f = 1 MHz - 1 - Ω
Dynamic characteristicsID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 59 - nCQG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 47.6 - nC
QGS gate-source charge ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 13.8 - nC
QGS(th) pre-threshold gate-source charge - 9.2 - nC
QGS(th-pl) post-threshold gate-
source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15 4.6 - nC
QGD gate-drain charge ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15; Fig. 14 17 - nC
VGS(pl) gate-source plateau
voltage
VDS = 50 V; Fig. 15; Fig. 14 - 4.4 - V
Ciss input capacitance - 3195 - pF
Coss output capacitance - 221 - pF
Crss reverse transfercapacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 136 - pF
td(on) turn-on delay time - 20.7 - ns rise time - 25 - ns
td(off) turn-off delay time - 52.5 - ns fall time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C 24 - ns
Source-drain diodeVSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V
trr reverse recovery time - 52 - ns recovered charge
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 50 V - 109 - nC
[1] Measured 3 mm from package.
NXP Semiconductors PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.003aad577
200 1 2 3 4VDS(V)
(A) 6
VGS(V)=4
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values003aad580
5000 2 4 6 8 10VGS(V)(pF)
Ciss
Crss
Fig. 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values003aad585 8 12 16 20VGS(V)
RDSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function003aad586
150 30 60 90 120 150ID(A)
gfs(S)
Fig. 8. Forward transconductance as a function ofdrain current; typical values
