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PZT3904 E6327-PZT3904E6327
NPN Silicon Switching Transistor
PZT 3904
NPN Silicon Switching Transistor• High DC current gain: 0.1mA to 100mA
• Low collector-emitter saturation voltage
• Complementary type: PZT 3906 (PNP)
Maximum Ratings
Thermal Resistance
PZT 3904
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
PZT 3904
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
PZT 3904
Switching TimesTurn-on time when switched from + VBEoff = 0.5B to - VBEon = 10.6V, - ICon
- IBon = 1mA275O
D.U.T.iV
EHN00011S
+10.6
-0.5i(V)
Input waveform; tr < 1ns; t
δ = 0.002
Delay and rise time test circuit; total shunt
capacitance of test jig and connectorss < 4pF; scope impedance = 10MΩ
Turn-off time ICon = 10mA; IBon = 1mA275
D.U.T.
EHN00012
1N916
1N916
+10.9
-9.1i(V)
Storage and fall time test circuit; total shunt
capacitance of test jig and connectors
Input waveform; tr < 1ns; 10 µs < tp ≤ 500 µs
PZT 3904
Total power dissipation PS)
* Package mounted on epoxy050˚C150100
1.6tot
Saturation voltage I, VCEsat)
EHP00711V
BE sat0
CE satV,BE
Permissible pulse loadtotmax / PtotDC = f (tp)-501010-4-3-2
totmax
totPDC
DC current gain hFE = f (IC)
EHP00712-1-1012
:
www.ic-phoenix.com
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