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PZT651 ,NPN Silicon Planar Epitaxial Transistor3R , Thermal Resistance, JunctionJAto Ambient (C/W)PZT651T1SOLDER STENCIL GUIDELINESPrior to pl ..
PZT651T1 ,NPN Silicon Planar Epitaxial Transistor2θPZT651T1INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGEMINIMUM RECOMMENDED FOOTPRINT FOR ..
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R5F21102FP , RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
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PZT3906
PNP Silicon Transistor (General small signal application Switching application)
Discrete POWER & Signal
Technologies
PNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-
ing applications at collector currents of 10 μA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2N3906
PZT3906MMPQ3 906
MMBT3906
Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
BE
TO-92
SOT-223
SOT-23
Mark: 2ACCCCCCC
SOIC-16BEBEBEB
