SFH617A ,Optocoupler, High Reliability, 5300 VRMSfeatures a high current transfer ratio, low coupling capacitance and high isolation voltage. These ..
SFH617A-1 ,6V; 50mA low input phototransistor optically coupled isolatorFeatures • Good CTR Linearity Depending on Forward Current Isolation Test Voltage, 5300 VRMS Hi ..
SFH617A-1 ,6V; 50mA low input phototransistor optically coupled isolatorRev. 1.4, 26-Oct-04 3P –Power Dissipation (mW)totSFH617AVISHAYVishay SemiconductorsCurrent Transfe ..
SFH617A-1 ,6V; 50mA low input phototransistor optically coupled isolatorFeatures • Good CTR Linearity Depending on Forward Current Isolation Test Voltage, 5300 VRMS Hi ..
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SI4948BEY-T1-E3 , Dual P-Channel 60-V (D-S) 175 MOSFET
SI4948EY ,50-V (D-S) Dual FaxBack 408-970-5600S-99444—Rev. E, 29-Nov-992-1Si4948EYVishay Siliconix
SFH617A
5.3 kV TRIOS Optocoupler High Reliability
FEATURESVariety of Current Transfer Ratios at I
=10 mA
– SFH610A/617A-1, 40–80%
– SFH610A/617A-2, 63–125%
– SFH610A/617A-3, 100–200%
– SFH610A/617A-4, 160–320%Low CTR DegradationGood CTR Linearity Depending on Forward CurrentWithstand Test Voltage, 5300 V
RMSHigh Collector-Emitter Voltage,
CEO
=70 VLow Saturation VoltageFast Switching TimesField-Effect Stable by TRIOS
(TRansparent IOn Shield)Temperature StableLow Coupling CapacitanceEnd-Stackable, .100" (2.54 mm) SpacingHigh Common-Mode Interference Immunity
(Unconnected Base)
DESCRIPTIONThe SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 V
RMS
or DC.
Specifications subject to change.
Characteristics =25
Current Transfer Ratio at
=5.0 V)
and Collector-Emitter Leakage Current by Dash Number
Figure 1. Switching Times (Typical)
Linear Operation (without saturation)
Figure 2. Switching Operation (with saturation)
Figure 3. Current Transfer Ratio (typ.)
vs. Temperature I=10 mA, V=5.0 V
Figure 4. Output Characteristics (typ.)
Collector Current vs. Collector-emitter
Voltage TA=25°C
Figure 5. Diode Forward Voltage
(typ.) vs. Forward Current
Figure 9. Permissible Diode
Forward Current vs. Ambient
Temperature
Figure 6. Transistor capacitance (typ.)
vs. collector-emitter voltage TA=25°C,
f=1.0 MHz
Figure 7. Permissible Pulse Handling
Capability. Forward Current vs. Pulse
Width Pulse cycle D=parameter, TA=25°C
Figure 8. Permissible Power
Dissipation vs. Ambient Temperature
This datasheet has been downloaded from:
www.ic-phoenix.com
Datasheets for electronic components.
