SGP20N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SGP20N60HS ,IGBTs & DuoPacksapplications offers:P-TO-220-3-1 P-TO-247-3-1- parallel switching capability(TO-220AB) (TO-247AC)- ..
SGP23N60UFD ,Ultra-Fast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGP23N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGP23N60UFDTU ,Discrete, High Performance IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGP40N60UF ,Ultra-Fast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SIL06C-05SADJ-VJ , DC-DC CONVERTERS C Class Non-isolated
SIL104-220 , SMT Power Inductor
SIL104R-1R5 , SMT Power Inductor
SIL104R-2R5 , SMT Power Inductor
SIL104R-3R8 , SMT Power Inductor
SIL104R-5R2 , SMT Power Inductor
SGB20N60 -SGP20N60
Fast S-IGBT in NPT-Technology
SGP20N60
SGB20N60, SGW20N60
Fast S-IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with
low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:- Motor controls- Inverter
• NPT-Technology for 600V applications offers:- very tight parameter distribution
- high ruggedness, temperature stable behaviour- parallel switching capability
Maximum Ratings
SGP20N60
SGB20N60, SGW20N60
Thermal Resistance
CharacteristicThermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
SGP20N60
SGB20N60, SGW20N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT CharacteristicTotal switching energy
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
SGP20N60
SGB20N60, SGW20N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
110A
COLLE
OR CURRE10V100V1000V
0.1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
Figure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
20W
40W
60W
80W
100W
120W
140W
160W
180W
200W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
20A
30A
40A
50A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature(VGE ≤ 15V, Tj ≤ 150°C)
SGP20N60
SGB20N60, SGW20N60
COLLE
OR CURRE1V2V3V4V5V
10A
20A
30A
40A
50A
60A
COLLE
OR CURRE1V2V3V4V5V
10A
20A
30A
40A
50A
60A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)
Figure 6. Typical output characteristics(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V
10A
20A
30A
40A
50A
60A
70A
CE(sat)
COLLE
ITT
SATU
ATI
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature(VGE = 15V)
SGP20N60
SGB20N60, SGW20N60
t,
ITC
TI
10A20A30A40A10ns
100ns
t,
ITC
TI10Ω20Ω30Ω40Ω50Ω60Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 20A)
CHI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
VO
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 20A, RG = 16Ω)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.7mA)
