SGL160N60UF ,Ultra-Fast IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, servo controls, and power ..
SGL160N60UFD ,Ultrafast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGL160N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGL160N60UFTU ,Discrete, High Performance IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, servo controls, and power ..
SGL34-100 , Surface Mount Schottky Rectifier Diodes
SGL34-30 , 0.8 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SII3531A , PCI Express to Serial ATA Controller
SII3531ACNU , PCI Express to Serial ATA Controller
SII3531ACNU , PCI Express to Serial ATA Controller
SII3531ACNU , PCI Express to Serial ATA Controller
SII3531ACNU , PCI Express to Serial ATA Controller
SII3726CBHU , SATA Port Multiplier
SGL160N60UF
Ultra-Fast IGBT
SGL160N60UF IGBT SGL160N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V (sat) = 2.1 V @ I = 80A CE C The UF series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies. C C G G TO-264 E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGL160N60UF Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C 160 A C I C Collector Current @ T = 100°C80 A C I Pulsed Collector Current 300 A CM (1) P Maximum Power Dissipation @ T = 25°C 250 W D C Maximum Power Dissipation @ T = 100°C 100 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case -- 0.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 25 °C/W θJA ©2002 SGL160N60UF Rev. A1
