SI3441 ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Battery management • ..
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SI3441
P-Channel 2.5V Specified PowerTrench MOSFET
Si3441DV April 2001 PRELIMINARY Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses • –3.5 A, –20 V. R = 80 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s low voltage PowerTrench process. It has R = 110 mΩ @ V = –2.5 V DS(ON) GS been optimized for battery power management applications. • Low gate charge Applications • High performance trench technology for extremely low R DS(ON) • Battery management • Load switch • Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) –3.5 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .441 Si3441DV 7’’ 8mm 3000 units Si3441DV Rev A (W) 2001
