SI3442 ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in lead frame for superior thermal and electrical capabilities.notebook computers, por ..
SI3442BDV ,N-Channel 2.5-V (G-S) MOSFETS-40424—Rev. C, 15-Mar-041Si3442BDVVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI3442BDV-T1-E3 ,N-Channel 2.5-V (G-S) MOSFETS-40424—Rev. C, 15-Mar-041Si3442BDVVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI3442DV ,N-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
SI3443CDV , P-Channel 20-V (D-S) MOSFET
SI3443CDV , P-Channel 20-V (D-S) MOSFET
SKKT57B16E , Thyristor / Diode Modules
SKKT72B16E , Thyristor / Diode Modules
SKKT92B16E , Thyristor / Diode Modules
SKM100GAL12T4 , Fast IGBT4 Modules
SKM100GB063D , Superfast NPT-IGBT Module
SKM100GB125DN , SEMITRANSR M Ultra Fast IGBT Modules
SI3442
N-Channel Logic Level Enhancement Mode Field Effect Transistor
March 2001 SI3442DV N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 4.1 A, 20 V. R = 0.06 W @ V = 4.5 V DS(ON) GS effect transistors are produced using Fairchild's proprietary, R = 0.075 W @ V =2.7 V. DS(ON) GS high cell density, DMOS technology. This very high density TM process is tailored to minimize on-state resistance. These Proprietary SuperSOT -6 package design using copper devices are particularly suited for low voltage applications in lead frame for superior thermal and electrical capabilities. notebook computers, portable phones, PCMICA cards, and High density cell design for extremely low R . other battery powered circuits where fast switching, and low DS(ON) in-line power loss are needed in a very small outline surface Exceptional on-resistance and maximum DC current mount package. capability. ____________________________________________________________________________________________ 4 3 2 5 6 1 Absolute Maximum Ratings T = 25°C unless otherwise note A Symbol Parameter SI3442DV V Drain-Source Voltage 20 V DSS V Gate-Source Voltage - Continuous 8 V GSS Drain Current - Continuous (Note 1a) 4.1 A I D - Pulsed 15 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 1 (Note 1c) 0.8 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W R JC q © 2001 SI3442DV Rev. A
