SI3445DV ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON)• ..
SI3446DV ,20-V (D-S) Single FaxBack 408-970-5600S-54952—Rev. A, 06-Oct-972-1Si3446DVVishay Siliconix
SI3445DV
P-Channel 1.8V Specified PowerTrench MOSFET
Si3445DV April 2001 Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –5.5 A, –20 V. R = 33 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s low voltage PowerTrench process. It has R = 43 mΩ @ V = –2.5 V DS(ON) GS been optimized for battery power management applications. R = 60 mΩ @ V = –1.8 V DS(ON) GS • Fast switching speed. Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) –5.5 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .445 Si3445DV 7’’ 8mm 3000 units Si3445DV Rev A (W) 2001
