SI3447 ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • High performance trench technology for extremely • Battery management low R DS(ON)• ..
SI3447BDV ,P-Channel 12-V (D-S) MOSFETS-21788—Rev. A, 07-Oct-021Si3447BDVNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHER ..
SI3447BDV-T1 ,P-Channel 12-V (D-S) MOSFETS-40424—Rev. B, 15-Mar-043I− Source Current (A) V− Gate-to-Source Voltage (V) r− On-Resistance ( ..
SI3447BDV-T1-E3 ,P-Channel 12-V (D-S) MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol 5 secs Steady State Uni ..
SI3447CDV , P-Channel 12-V (D-S) MOSFET
SI3447CDV , P-Channel 12-V (D-S) MOSFET
SKM100GB12T4G , Fast IGBT4 Modules
SKM100GB12V , Target Data
SKM100GB176D , Trench IGBT Modules
SKM111AR , Power MOSFET Modules
SKM145GB176D , Trench IGBT Modules
SKM150GAL12T4 , Fast IGBT4 Modules
SI3447
P-Channel 1.8V Specified PowerTrench MOSFET
Si3447DV April 2001 Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –5.5 A, –20 V. R = 33 mΩ @ V = –4.5 V DS(ON) GS Fairchild’s low voltage PowerTrench process. It has R = 43 mΩ @ V = –2.5 V DS(ON) GS been optimized for battery power management applications. R = 60 mΩ @ V = –1.8 V DS(ON) GS • Fast switching speed. Applications • High performance trench technology for extremely • Battery management low R DS(ON) • Load switch • Battery protection S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 I Drain Current – Continuous (Note 1a) –5.5 A D – Pulsed –20 P Maximum Power Dissipation (Note 1a) 1.6 W D (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .447 Si3447DV 7’’ 8mm 3000 units Si3447DV Rev A (W) 2001
