SI3455DV ,30-V (D-S) Single
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SI3455DV
30-V (D-S) Single
Si3455DV
Vishay Siliconix
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VISHAY
P-Channel 30-V (D-S) MOSFET
Rnsmm tol stff
0.100@Vss=-10V © ks't
0.190@VGs=-A.5V 'tlt. Bt
TSOP-6
Top View
CE 1 6 TI
(3) G ''T
3 mm CE 2 5 TI
CE s 4 TI
l-2.85mm-H (1,2,5,6)D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (ilya 25°C UNLESS OTHERWISE NOTED)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage Vros -30
Gate-Source Voltage VGS l 20
TA = 25°C i 3.5
Continuous Drain Current (To = 150°C)A ID
T = 70°C
A l 2.7 A
Pulsed Drain Current IDM l 20
Continuous Source Current (Diode Conduction)" Is -1.7
TA = 25°C 2.0
Maximum Power Dissipation" PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
PARAM ETER SYMBOL
Maximum Junction-to-AmbientA RthJA
A. Surface Mounted on FR4 Board, t s 5 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70194.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 . Phone (408)988-8000 . FaxBack (408)970-5600 . www.siliconix.com
S-56944-Rev. D, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors
Si3455DV
Vishay Siliconix
VISHAY
SPECIFICATIONS tiha 25°C UNLESS 'stulljiiyh2ugWLtVijI
PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT
STATIC
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 " -1.0 V
Gate-Body Leakage ksss 1/ros = 0 V, VGS = i 20 V i 100 nA
Vros=-30VVss=0V -1
Zero Gate Voltage Drain Current '083 “A
VDs=-30V,VGs=0V,Tv=701 -5
On-State Drain CurrentA low") Vros = -5 V, VGs = -10 V -15 A
VGs=-10V, ID=-3.5A 0.080 0.100
Drain-Source On-State Resistance" rDS(on) Q
Vss=-4.5V,lro---2.5 A 0.134 0.190
Forward TransconductanceA gfs VDS = -1 5 V, ID = -3.5 A 4.0 S
Diode Forward VoltageA VSD ls = -1.7 A, VGS = 0 V -1.2
DYNAMIC''
Total Gate Charge % 5.1 10
Gate-Source Charge Qgs Vos = -10 V, VGS = -10 V, ID = -3.5 A 1.5 nC
Gate-Drain Charge di 1.0
Turn-On Delay Tlme thon) 10 20
Rise Time tr VDD = -10 V, RL =10 Q 15 30
Turn-Off Delay Time tam) lo E -1 A, VGEN = -10 V, RG = 6 Q 20 35 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Time trr IF = -1.7 A, dildt = 100 Alps 50 8O
A. Pulse test; pulse width 5 300 us, duty cycle 5 2%.
B. Guaranteed by design, not subject to production testing.
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 . Phone (408)988-8000 . FaxBack (408)970-5600 .
Siliconix was formerly a division of TEMIC Semiconductors
S-56944-Rev. D, 23-Nov-98
www.siliconix.com
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VISHAY
Si3455DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS OTHERWISE NOTED)
A 0.24
g 0.18
8 0.12
F? 0.06
(iii] 8
Output Characteristics
VGS=10, 9, 8,7N/ o/,j,fffp" -,---''a"''""
I s,p'''"
tf''''''''" 5 V
(e'"'''''"""
' 4 V -
IC,.,.-------
fd' 3 V
0 1 2 3 4
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V //
w,,..,,,,,,?
-....,--"
Qg - Total Gate Charge (nC)
VGS = 10 V
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VDS = 15V
ID = 3.5 A /
0 1.5 3.0 4.5 6.0
rDS(on)— On-Resistance( Q)
I D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
l I l I
TC = -55oC /
16 l I
25°C /
"y 125°C
0 1 2 3 4 5 6 7
I/ss - Gate-to-Source Voltage (V)
Capacitance
500 Ciss
0 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
af'""''"'""'"""' vs. Junction Temperature
1.45 - VG = 10V
|D=3.5A
1.30 //
1 15 I
0.85 ops'''
s,,,,,,,,,,,-'''''''"
-50 -25 0 25 50 75 100 125 150
TJ _ Junction Temperature (°C)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 .
S-56944-Rev. D, 23-Nov-98
Phone(408)988-8000 . FaxBack(408)970-5600 . www.siliconix.com
Siliconix was formerly a division of TEMIC Semiconductors
Si3455DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
TJ = 150°C
0.25 0.50 0.75 1.00 1.25 1.50 1.75
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
|D=25011A /
g 0.30
= 0.15
0 0.00
Normalized Effective Transient
Thermal Impedance
-25 0 25 50 75 100 125 150
TJ - Temperature CC)
VISHAY
On-Resistance vs. Gate.to.Souree Voltage
A 0.32
.,F. 0.24
8 0.16 k ID = 3.5 A
A xsss'
h' 0.08
O 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
g 18 l
6 's,,
0.01 0.10 1.00 10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Single Pulse
1 (r3 1 0-2
Notes:
_.L: _
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 62.5°CNV
3. TJM - TA = PDMZmJA“)
4. Surface Mounted
Square Wave Pulse Duration (sec)
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 .
S-56944-Rev. D, 23-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors
Phone (408)988-8000 .
FaxBack(408)970-5600 . www.siliconix.com
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