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SI3456DVFAIRCHILDN/a995avaiN-Channel PowerTrench MOSFET


SI3456DV ,N-Channel PowerTrench MOSFETapplications where low in-line power Low gate chargeloss and fast switching are required. High po ..
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SI3456DV
N-Channel PowerTrench MOSFET
Si3456DV June 2002 Si3456DV � N-Channel PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced � 5.1 A, 30 V. R = 45 m� @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced Power R = 65 m� @ V = 4.5 V DS(ON) GS Trench process that has been especially tailored to minimize the on-state resistance and yet maintain � High performance trench technology for extremely superior switching performance. low R DS(ON) These devices are well suited for low voltage and battery powered applications where low in-line power � Low gate charge loss and fast switching are required. � High power and current handling capability S D 1 6 D 2 5 G D 3 4 TM D SuperSOT -6 o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V V Gate-Source Voltage V GSS �20 I Drain Current – Continuous (Note 1a) 5.1 A D – Pulsed 20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG �C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R �C/W �JA Thermal Resistance, Junction-to-Case (Note 1) 30 R �JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .456 Si3456DV 7’’ 8mm 3000 units �2002 Si3456DV Rev B
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