SI3457BDV-T1-E3 ,P-Channel 30-V (D-S) MOSFETS-40424—Rev. D, 15-Mar-044Normalized Effective TransientV Variance (V)GS(th)Thermal ImpedanceI− Dra ..
SI3457CDV , P-Channel 30-V (D-S) MOSFET
SI3457CDV , P-Channel 30-V (D-S) MOSFET
SI3457CDV-T1-E3 , P-Channel 30-V (D-S) MOSFET
SI3457CDV-T1-GE3 , P-Channel 30-V (D-S) MOSFET
SI3457DV ,30-V (D-S) Single FaxBack 408-970-5600S-56944—Rev. C, 23-Nov-982-1Si3457DVVishay Siliconix
SI3457BDV-T1-SI3457BDV-T1-E3
P-Channel 30-V (D-S) MOSFET
VISHAY
Si3457BDV
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.054 © VGS = -10 V -5.0
0.100 @ Vcs = -4.5 v -3.7
TSOP-6
Top View
Orderinglnformation: Si3457BDV-T1
Si3457BDV-T1-E3 (Lead Free)
Marking Code: 7Bxxx
(3)G 'T
(1,2, 5, 6) D
P-Channel MOSFET
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage VGs $20
TA = 25°C -5.0 -3.7
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C -4.0 -3.0
Pulsed Drain Current IBM -20
Continuous Source Current (Diode Conduction)" Is -1.7 -0.95
TA=25°C 2.0 1.14
Maximum Power Dissipationa PD W
TA = 70°C 1.3 0.73
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t S 5 sec 53 62.5
M . J ti -t -A bi ta R
ax1mum unc Ion o m Ien Steady State thJA 90 110 °C/W
Maximum Junction-to-Foot (Drain) Steady State Rm”: 25 36
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 72019
S-40424-Rev. D, 15-Mar-04
www.vishay.com
Si3457BDV
Vishay Siliconix
IE=7'"
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) I/tos = VGs, ID = -250 WA -1.0 -3 V
Gate-Body Leakage Kass 1/ros = 0 V, Vas = $20 V cl: 100 nA
VDs---30V,VGs--0V -1
Zero Gate Voltage Drain Current loss 0A
Vos = -30 V, Vss = 0 V, T: = 85°C -5
On-State Drain Currenta IMO”) V95 2 -5 V, Ves = -10 V -20 A
Vas = -10 v, ID = -5.0 A 0.044 0.054
Drain-Source On-State Resistance" roman) Q
VGS = -4.5 V, ID = -3.7A 0.082 0.100
Forward Transconductancea gfs VDs = -15 V, ID = -5.0 A 10
Diode Forward Voltage" Vsro ls = -1.7 A, VGS = O V -0.8 -1.2 V
Dynamicb
Total Gate Charge Qg 12.5 19
Gate-Source Charge Qgs VDS = -15 V, Vas = -10 V, ID = -5.0 A 2.1 nC
Gate-Drain Charge di 3.5
Turn-On Delay Time td(on) 7 15
RiseTime tr Vrxr---15V,RL--15C2 10 15
Turn-Off Delay Time tii(ott) ID _ -1 A, VGEN = -10 V R9 = 6 Q 30 45 ns
Fall Time tf 22 35
Source-Drain Reverse Recovery Time trr IF = -1.7 A, di/dt = 100 Alps 25 60
a. Pulse test; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 ',,,,,e','f.i''r I 20
, A VGS=1Othru5V
"ii:.'] fi:.]
E 12 "E 12
E 4 V .E
g' 8 ti-.' 8
I "-""'" I
_ 4 _ 4
0 1 2 3 4 5 6 O 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) Vss - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 72019
2 S-40424-F%v. D, 15-Mar-04
VISHAY
Si3457BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rDS(on) — On-Resistance ( g2)
VGS — Gate-to-Source Voltage (V)
| S — Source Current (A)
On-Resistance vs. Drain Current
VGS = 4.5 V ,,,,,/'"
VGS = 10 V
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
10 1 1 I
VDS = 10 v
ID = 5 A
0 2 4 6 8 10 12 14
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150''C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(on) — On-Resiistance
(Normalized)
rDS(0n) — On-Resistance (Q)
Capacitance
600 "mm-_,
mo "ss,
'mm--,
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
"6 l 1
Vss--10V
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
10 = 2 A ID = 5 A
0.08 I,
o 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 72019
S-40424-Rev. D, 15-Mar-04
www.vishay.com
Si3457BDV 'Gai';
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.6 /''' 50 l
0.4 /''' 40 (
E ID = 250 WA 'w'''' N
g 0.2 l g 30 ,
.9 w''" V 1
'gc.'" o o ac] 20
> ',,w" \
-0 2 / l
. " 10 t 'N,
-0.4 0
-50 -25 0 25 50 75 100 125 150 10-3 10-2 IO-l 1 10 100 600
To - Temperature (''C) Time (sec)
Safe Operating Area
IDM Limited
rDS(on) Limited
10 P(t) = 0.0001
'c Pt = 0.001
a 1 ( )
.E b(on) =
I' Limited P(t) O.01
r), P(t) = 0.1
- TA = 25''C P t = 1
0.1 Single Pulse (t)
Pm = 10
BVDSS Limited
0.1 1 10 100
I/os - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li Duty Cycle = 0.5
, "i'.
'if,' g Notes:
Its a -T-
E: E 0 1 PDM
G) (D .
2 ,5 k
E tl v-
B _'L_ ta t1
a 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 90°C/W
. 3. TJM - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72019
4 S-40424-F%v. D, 15-Mar-04
“3% Si3457BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
DocumentNumber: 72019 www.vishay.com
S-40424-Rev. D, 15-Mar-04 5
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