SI4420DYTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.SO-8 Parameter Max. UnitsV Drain- Source Voltage 30 VDSI @ T = 25° ..
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SI4420DYTRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95729
Tait Rectifier
HEXFET@ Power MOSFET
o N-Channel MOSFET
0 Low On-Resistance S [11 , 83]: D V - 30V
. Low Gate Charge 5:2 LITE D DSS -
0 Surface Mount S E:
. Logic Level Drive s E3 6333 D
o Lead-Free ear“ 5:1: D RDS(on) = 0.0099
. . To View
Description p
This N-channel HEXFETO power MOSFET is produced
using International Rectifler's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V i12.5
ID @ TA = 70°C Continuous Drain Current, l/cs @ 10V :10 A
IDM Pulsed Drain Current (D t50
Pro @TA = 25''C Power Dissipation © 2.5 W
Pro @TA = 70''C Power Dissipation co 1.6
Linear Derating Factor 0.02 W/°C
EAs Single Pulse Avalanche Energy© 400 mJ
Vss Gate-to-Source Voltage 1: 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 50 'C/W
1
8/11/04
Si4420DYPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - O.009 Q VGS = 10V, ID = 12.5A ©
- - 0.013 VGS = 4.5V, ID = 10.5A co
VGS(th) Gate Threshold Voltage 1.0 - - V Vos = VGS, ID = 250pA
gts Forward Transconductance - 29 - S Vos = 15V, ID = 12.5A
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 30V, Vss = 0V 0
- - 5.0 VDs = 30V, N/ss = 0V, To = 55 C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 52 78 ID = 12.5A
Qgs Gate-to-Source Charge - 8.7 - nC Vos = 15V
di Gate-to-Drain ("Miller") Charge - 12 - I/cs = 10V, See Fig. 6 ©
lawn) Turn-On Delay Time - 15 - Voc) = 15V
tr Rise Time - 10 - ns lo = 1.0A
td(off) Turn-Off Delay Time - 55 - Rs = 6.09
tf Fall Time - 47 - RD = 159, ©
Ciss Input Capacitance - 2240 - VGs = 0V
COSS Output Capacitance - 1100 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Diode Conduction) - - 2.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - 50 p-n junction diode. s
VSD Diode Forward Voltage - - 1.1 V TJ = 25°C, Is = 2.3A, VGS = 0V ©
tn Reverse Recovery Time - 52 78 ns T: = 25°C, IF = 2.3A
Notes:
C) Repetitive rating; pulse width limited by © Starting TJ = 25°C. L = 13mH
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
© When mounted on FR4 Board, ts10 sec
Rs = 259, IAS = 8.9A. (See Figure 15)
