SI4426DY ,20-V (D-S) Single FaxBack 408-970-5600S-01041—Rev. B, 15-May-002-1Si4426DYNew ProductVishay Siliconix
SI4425DY
Single P-Channel, Logic Level, PowerTrench TM MOSFET
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VISHAY
Si4425DY
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.014@VG3= -10 V -11
0.023 @ Vas = -4.5 V -8.5
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Ordering Information: Si4425DY
Si4425DY-T1 (with Tape and Reel)
P-Channel MOSFET
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage Ves £20
TA = 25°C .11 -8
Continuous Drain Current (T J = 150°C)3 In
TA=7OOC -8.7 -6.5
Pulsed Drain Current IBM -50
continuous Source Current (Diode Conduction)a Is -2.7 -1.36
TA = 25°C 3.0 1.5
Maximum Power Dissipation" PD W
TA = 70°C 1.9 0.95
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t S 10 sec 33 42
Maxi J tion-to-Ambienta R
ax1mum unc Ion o m Ien Steady State thJA 70 84 “CM
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71817
S-31990-ReV. E, 13-Oct-03
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Si4425DY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) I/tos = VGs, ID = -250 WA -1.0 -1.9 3.0 V
Gate-Body Leakage Kass 1/ros = 0 V, Vas = $20 V cl: 100 nA
VDs---30V,VGs--0V -1
Zero Gate Voltage Drain Current loss 11A
Vos=-30V,Vss--0V,Tu--701 ~10
On-State Drain Currenta IMO”) VDs = -5 V, VGS = - 10 V -30 A
VGs=-1OV, |D=-11A 0.010 0.014
Drain-Source On-State Resistance" roman) Q
VGS = -4.5 V, ID = 8.5A 0.017 0.023
Forward Transconductancea gis VDs = -15 V, ID = -11 A 23
Diode Forward Voltage" Vsro ls = -2.7 A, VGS = O V -0.75 -1.1 V
Dynamicb
Total Gate Charge Q9 33 50
Gate-Source Charge Qgs VDS = - 15 V, l/ss = -4.5 V, ID = -11 A 10 nC
Gate-Drain Charge di 13
Turn-On Delay Time td(0n) 20 30
Rise Time tr VDD = -15 V, RL =10 Q 15 25 ns
Turn-Off Delay Time tii(ott) ID E -l A,1/GEN = -10 v, RG = 6 Q 95 150
Fall Time tf 44 65
Gate Resistance Rg 3.2 Q
Source-Drain Reverse Recovery Time trr IF = -2.1 A, di/dt = 100 Alps 50 80 ns
a. Pulse test; pulse width S 300 ps, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS = 10 taru 5 V
40 4 V 40
Ct.] I (aL:]
E 30 I E 30
E 20 E 20
o © TE = 125°C
_ 10 3 v - 10 _
25''C /
l 2g3 -55°c
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71817
S-31990-F%v. E, 13-Oct-03
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VISHAY
Si4425DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9 0.024 I
g VGS = 4.5 V
it' 0 018 _,,.,-,,--'-"'"
CD . --'""
II -------"""
' 0.012 VGS=10V
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
VDS = 15 V
E ID = 11 A
81 8 l
0 4 -/
0 14 28 42 56 70
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
E Tu = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C - Capacitance(pF)
roam) - On-Resistance(9)
rDS(0n) - On-Resistance(§2)
(Normalized)
Capacitance
4800 \
V,,., Ciss
1200 k
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
"6 l 1
vss = 10 v
ID = 11 A
1.2 ,,,,?
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
b = 11 A
o 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71817
S-31990-ReV. E, 13-Oct-03
www.vishay.com
Si4425DY "f,F,Ai,
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.8 200 )
0.6 pr 160
2 0.4 ID = 250 HA
8 E 120
E 0.2 '
A " g \
'ci.. tl. 80
8 O O N
-0.2 w''''' N
s,,,,,,,,-''''' "sa.,
-o.4 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (''C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
g a 0.1 PDM
LY f-' l
E t, v-
a 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 70°C/W
. 3. Torg _ TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com DocumentNumber: 71817
4 S-31990-F%v. E, 13-Oct-03
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