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SI4433DY
P-Channel 1.8V (G-S) MOSFET
VZISHAY Si4433DY
New Product Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY FEATURES
v v r g I A . TrenchFET© Power MOSFET
ost ) Dston)( ) oi ) . Fast Switching
0.110@Vss= -A.5V -3.9
-20 0.160 @ Vss = -2.5 v -3.2 APPLICATION
. DC-DC Conversion
0.2 0 v = -1.8 v -2.6
4 @ GS o Asynchronous Buck Converter
. Voltage Inverter
Top Mew
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs l Steady State Unit
Drain-Source Voltage Vros -20
Gate-Source Voltage VGS ch 8
TA = 25°C -3.9 -2.9
Continuous Drain Current (TJ = 150oC)a ID
TA = 85°C -2.8 -2A
Pulsed Drain Current 'DM -10
Continuous Source Current (Diode Conduction)a Is -2.1 -1.2
TA = 25°C 2.5 1.4
Maximum Power Dissipation" PD W
TA = 85°C 1.3 0.7
Operating Junction and Storage Temperature Range Tr Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 40 50
Maximum Junction-to-Ambienta Steady State RNA 75 90 'CA/ll
Maximum Junction-to-Foot (Drain) Steady State RthJF 19 25
a. Surface Mounted on 1" x l" FR4 Board.
DocumentNumber: 71663 www.vishay.com
S-04245-Rev. A, 16-Jul-01 1
Si4433DY VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A Mh45 V
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V cl: 100 nA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
Vos=-16V,Vss--0V,T,j=85l -5
On-State Drain Currenta ID(on) Vos S -5 V, VGS = -A.5 V -10 A
VGs=-4.5 V, Io---?) 0.095 0.110
Drain-Source On-State Resistancea rDs(on) VGs = -2.5 V ID = -2.2 A 0.137 0.160 Q
VGS = -1.8 v, ID = -1 A 0.205 0.240
Forward Transconductancea gfs I/tos = -10 V ID = -2.7 A 7
Diode Forward Voltagea VSD ls = -0S A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 4.4 6.5
Gate-Source Charge Qgs Vros = -1 0 V, VGS = -A.5 V, ID = -2.7 A 1.4 nC
Gate-Drain Charge di 0.65
Turn-On Delay Time tam) 16 25
Rise Time tr VDD = -10 V. RL = 10 Q 30 45
Turn-Off Delay Time tam“, ID _ -1 A, VGEN = -4.5 V, Re = 6 C2 30 45 ns
Fall Time tr 27 40
Source-Drain Reverse Recovery Tlme trr IF = -0.9 A, di/dt = 100 Alps 20 40
a. Pulsetest; pulse width S 300 us, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
0 f 1 1 0 l 1
y' VGS = 5thru 3 V TC = _55°c
2.5 V 1
8 I 8 25°C \Jl/
<3 w'''''' _iaC:'., Jf
E’ 6 E 6 125°C -
E 2 V .E
S 4 E 4
- 2 - 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71663
2 S-04245-Rev. A, 16-Jul-01
VISHAY
Si4433DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I’Dsmn) - On-Resistance ( £2)
V GS — Gate-to-Source Voltage (V)
Is — Source Current (A)
On-Resistance vs. Drain Current
VGS = 1.8 V
V = 2.5 V
0.2 -.P/ GS -
-...--''''''' =
.----"" V68 4.5 V
0 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
VDS = 10 V
ID = 2.7 A
O 1 2 3 4 5
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ =150°c
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
-50 -25 O 25 50 75 100 125 150
Capacitance
Ns, Coss
"tttm-_,
0 4 8 12 16 20
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 2.7 A o,,,i'''
s,,,,,,,,,-'''''''"
"''''''"
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 2.7A
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71663
S-04245-Rev. A, 16-Jul-01
www.vishay.com
Si4433DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
ID = 250 WA "
S' .2 o,,,,.''''''
E 0.1 / a
gi" ',,i''" fi]
-50 -25 0 25 50 75 100 125 150
To - Temperature (°C)
Single Pulse Power
1o-3 1o-2 IO-l 1 10 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 75°CIW
3. TJM - TA = PDMZthAm
4. Surface Mounted
10 100 600
f, Duty Cycle = 0.5
I' a 0.2
ilr', ' 0.1
8 a 0.1
Single Pulse
Ity-A 10v3 1ty-2 Ity-l 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
I' a 0.2
if',' g
8 F, 0.1
o . 0.05
Single Pulse
1o-4 10-3 102 IO-I
Square Wave Pulse Duration (sec)
1 10 100
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DocumentNumber: 71663
S-04245-Rev. A, 16-Jul-01
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