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SI4490DY
N-Channel 200-V (D-S) MOSFET
C=C7'"
VISHAY
Si4490DY
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (C2) ID (A)
0.080 V = 1 V 4.
200 @ GS 0 0
0.090 @ VGS = 6.0 V 3.8
Top View
Ordering Information: Si4490DY
Si4490DY-TI (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 200
Gate-Source Voltage VGs i 20
TA=25°C 4.0 2.85
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C 3.2 2.3
Pulsed Drain Current IBM 40 A
Avalanch Current L = 0.1 mH IAS 15
Continuous Source Current (Diode Conduction)a ls 2.6 1.3
TA=25°C 3.1 1.56
Maximum Power Dissipation" PD W
TA = 70°C 2.0 1.0
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 33 40
Maximum Junction-to-Ambienta Steady State RNA 65 80 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21
a. Surface Mounted on l" x l" FR4 Board.
Document Number: 71341
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4490DY
Vishay Siliconix
CCCD7'"
VISHAY
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 LA 2.0 V
Gate-Body Leakage less VDs = 0 V, VGS = 1:20 V ch 100 nA
VDS=160V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS pA
VDs=160VVss=0V,Tu=551 5
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 10 V 40 A
VGS = 10 V, ID = 4.0A 0.065 0.080
Drain-Source On-State Resistancea rDS(on) Q
VGS = 6.0 V, b = 4.0A 0.070 0.090
Forward Transconductanoea gfs Vos = 15 V, b = 5 A 19 S
Diode Forward Voltagea VSD ls = 2.8 A, VGS = 0 V 0.75 1.2 V
Dynamicb
Total Gate Charge Q9 34 42
Gate-Source Charge Qgs VDS = 100 V, VGS = 10 V, ID = 4.0 A 7.5 nC
Gate-Drain Charge di 12.0
Gate Resistance Rg 0.2 0.85 12 Q
Turn-On Delay Tlme tdwn) 14 20
Rise Time t, Yoo = 100 V, RL = 25 Q 20 30
Turn-Off Delay Tlme tam) lo E 41) A, VGEN = 10 V, Re = 6 Q 32 50 ns
Fall Time if 25 35
Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 Alps 70 100
a. Pulse test; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
tr' VGS=10thru6V 35 l”
32 // I
Cd.] "its, // I
E 24 E 25 I f f
8 5 20
g E f f
/5 16 ch 15
' ' rc=125°c / l f
f 5 v f 10 I I
8 l 25oC l / /
5 V' r
IN LV -55°
0 I 0 C -
0 2 4 6 8 10 0 2 3 4 5 6
VDS - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
www.vishay.com Document Number: 71341
S-03951-Rev. B, 26-May-03
C=C7'"
VISHAY
Si4490DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
7.3 0.15
t 0.10 I/tss = 6 v
l -,...,,,,.---err:rc:.".u---"''''
E . VGS = 10 v
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
1/ros=100V
ID = 4.0 A
12 ,,,,,/''''
0 15 30 45 60
Q9 - TotalGate Charge(nC)
S - Gate—to—Source Voltage(V)
Source-Drain Diode Forward Voltage
Is - Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
Capacitance
A 2000
3; Ciss
g 1500
' 1000
500 Crss
/ Coss
0 40 80 120 160 200
I/os - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
2.5 l l
VGS = 10 V
A ID = 4.0 A /
59 -o ',,,W''
8 (i', 1 5 /
'1. E /
8 S w,,,,''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
a 0.20
C," |D=4.OA
Z) 0.15
, 0.10
f 0.05
0 2 4 6 a 10
V65 - Gate-to-Source Voltage (V)
Document Number: 71341
S-03951-Rev. B, 26-May-03
www.vishay.com
Si4490DY FiiFiii;
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
1.0 60 I
0.5 "s,
"s, ID = 250 11A
'ss, 20 l
Power (W)
V650,» Variance (V)
-1.0 's, 10 _
-1.5 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E) Duty Cycle = 0.5
3 8. 0.2
"ii g Notes:
8 E 0.1 PDM
E .5 1
g “L te t
a l. Duty Cycle, D = T;
2. Per Unit Base = RmJA = 65°C/W
. 3. TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
ll' Duty Cycle = 0.5
ioli',o. 0.2
ltx - 0.1
Single Pulse
10-4 10-3 IO-i? 10-1 1 10 100 1000
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71341
4 S-03951-Rev. B, 26-May-03
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