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SI4500DY
Complementary MOSFET Half-Bridge (N- and P-Channel)
VISHAY
Si4500DY
New Product
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.030 v = . .
N-Channel 20 @ GS 4 5 V i 7 0
0.040@VGS=2.5V $6.0
0.065 v = -A.5 v .
P-Channel -20 @ GS i 4 5
0.100@Vss=-2.5V 3:35
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage I/ss i 12 d: 12
TA-- 25''C 17.0 i4.5
Continuous Drain Current (To = 150°C)a' b ID
TA-- 70°C i5.5 i3.5 A
Pulsed Drain Current IDM ck 30 d: 20
Continuous Source Current (Diode Conduction)' b Is 1.7 -1.7
TA = 25°C 2.5
Maximum Power Dissipation' b PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
N-Channel P- Channel
Parameter Symbol Typ Max Typ Max Unit
t s 10 sec 38 50 40 50
Maximum Junc’tion-to-Ambienta RNA
Steady-State 73 95 73 95 “CM
Maximum Junction-to-Foot Steady-State Rthoc 17 22 20 26
a. Surface Mounted on FR4 Board.
b. t s 10 sec
Document Number: 70880
S-00269-Rev. A, 26-Apr-99
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Si4500DY VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
VDS = Kas, ID = 250 wk N-Ch 0.6
Gate Threshold Voltage VGSM V
VDS = Veg, ID = -250 MA P-Ch -0.6
N-Ch ci: 100
Gate-Body Leakage 'GSS VDs = 0 V, VGS = d: 12 V nA
P-Ch ck 100
I/os = 16 V, VGS = 0 V N-Ch 1
VDS = -16 V, VGS = O V P-Ch -1
Zero Gate Voltage Drain Current lryss pLA
V03: 16 V,VGs=0V,TJ=55''C N-Ch 5
VDS = -16 V, VGS = 0 V, Tu = 55°C P-Ch -5
V =5V,V =4.5V N-Ch 30
On-State Drain Currentb len) DS GS A
Vos = -5 V, VGS = -4.5 V P-Ch -20
VGS = 4.5 V, ID = 7.0 A N-Ch 0.022 0.030
. . VGS = -4.5 V, ID = -4.5 A P-Ch 0.058 0.065
Drain-Source On-State Resistance' rDS(0n) Q
VGS = 2.5 V, ID = 6.0 A N-Ch 0.030 0.040
VGS = -2.5 V, ID = -3.5 A P-Ch 0.087 0.100
Vos = 15 V, ID = 7.0 A mm 22
Forward Transconductanceb gfs S
Vos=-15V, Io=-4.5A P-Ch 10
ls =1.7 A, VGS = 0 V N-Ch 0.70 1.2
Diode Forward Voltageb VSD V
ls = -1.7 A, Ves = 0 V P-Ch -0.80 -1.2
Dynamica
N-Ch 13 25
Total Gate Charge % P Ch
N-Channel - 8.5 15
VDS= 10 V, VGS=4.5 V, ID: 3.5A N-Ch 3.0
Gate-Source Charge Qgs nC
P-Channel P-Ch 2.8
V =-10V.V ---45VIrn---A.5A
. DS 0 ' GS 5 , D 5 N-Ch 3.3
Gate-Drain Charge di
P-Ch 1.7
T C) D I Ti t N-Ch 22 40
urn- n e ay Ime d
(on) P-Ch 15 30
N-Channel
Rise Time tr VDD =10 V, RL =10 Q N Ch 0 80
ID a 1A, VGEN = 4.5 V, Rs = 6 Q P-Ch 32 60
P-Channel N-Ch 50 100
Turn-Off Delay Time td(oii) VDD = -10 V, RL = 10 Q P Ch ns
ID --lA,VGEN---4.5N/,RG--6Q - 57 100
N-Ch 20 40
Fall Time tr
P-Ch 40 80
N-Ch 40 80
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/,us
P-Ch 40 80
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width s 300 us, duty cycle s 2%.
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2-2 S-00269-Rev. A, 26-Apr-99
VISHAY
Si4500DY
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
G 0.06
i':', 0.04
'iii" 0.02
(1) 0.9
Output Characteristics
Qg - Total Gate Charge (nC)
'VGS = 5th'ru 3V I
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
- VGS = 2.5 V j
VGS = 4.5 V
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 10 V s,p'''
ID = 4.5 A /'"
0 3 6 9 12 15
FDS(on)— On-Resistance (
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
TC=125°C
\/ -551
0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
0 4 8 12 16 20
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 - VGS=4.5V
ko=4.5A
1.4 "-""''''
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70880
S-00269-Rev. A, 26-Apr-99
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Si4500DY
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20 0.10
10 0.08
A I = 4.5 A
g 0.06
tD Tu = 150°C
g 0.04
- 5 0.02
0 0.2 0.4 0.6 0.8 1.0 1.2 o 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
0 Threshold Voltage Single Pulse Power, Juncion-To-Ambient
.4 I l
ID = 250 11A
0.2 \ l
'ss, 60
S' g l
E b' 40
5', "ss, n.
g Mh2 x N
8 "ss, ‘u
> "ss, 20
-0.4 _ \
'ss, 's,
''''''''''s"-,,,,,,.
-0.6 0
-50 -25 O 25 50 75 100 125 150 0.001 001 0.1 1 10
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 (J-i?
1 o-I 1
Square Wave Pulse Duration (sec)
Notes:
_.L:|._
1. Duty Cycle, D = te
2, Per Unit Base = RthJA = 73°CNV
3. TJM - TA = PoMZthoA(t)
4. Surface Mounted
10 100 600
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Document Number: 70880
S-00269-Rev. A, 26-Apr-99
VISHAY Si4500DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1 10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
20 20 I
/ 3 v / To = -55°C (i/
16 'sl' l 16 I
VGS = 5, 4.5, 4, 3.5 V (/
A I A 125°C
g l 2.5 v 5 I l
it, 12 E 12 I I o
5 '5 25 C
E: 8 / ‘E 8
D 2 V O
- 4 - 4
(f 1.5 V
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 1500
A 0.16 1200 ISS
E V = 2.7 V o
I','-'; 0.12 VGS= 2.5V / pr GS - g 900
F, J2.
o; w,,,,.,-:'...,,,,,,,,) g l
6 0.08 ----"" I-.-.''' Ves = 4.5 v 8 600
F? 0.04 300 It _ oss
0 4 8 12 16 20 O 4 8 12 16 20
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Document Number: 70880
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S-00269-Rev. A, 26-Apr-99
Si4500DY
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
5 Gate Charge
VDS=10V
ID=4.4A
g /" Ct
> 3 c A
m _/ g 8
E .9 N
3 tn i
J) T- /t: g
O 2 E O
7:, / C) ?5.
lis' A
l / iri
0 2 4 6 8 10
Q9 - Total Gate Charge(nC)
Source-Drain Diode Forward Voltage
Ci:] v
's "a'
g T J = 150°C :13
0 0.25 0.50 0.75 1.00 1.25 1.50
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
S w"''
w 0.2 I g
8 ID = 250 WA / "
ts " E
fa':. 0.0
> o,,,,,,-'''''''
-50 -25 0 25 50 75 100 125 150
TJ - Temperature CC)
P-CHANNEL
On-Resistance vs. Junction Temperature
sz = 4.5 v 1/
1.4 - ID = 4.4 A 'pr''''"
1.2 w,,,,,,,,,,,,,,,-''''''''''''
0.8 ',,sr''''" ',,,w'''''
-50 -25 O 25 50 75 100 125 150
Tu - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0.12 (
ID = 4.4 A
a"'""----.
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Single Pulse Power, Juncion-To-Ambient
\“--u.
0.001 0.01 0.1 1 10
Time (sec)
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Document Number: 70880
S-00269-Rev. A, 26-Apr-99
VISHAY
Si4500DY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
tO a.)
J-' g 0.2 Notes:
g o. PDM
ID - i
E , 0.1 "
8 t, -ty-1 t2 t
(-i, FE 1. Duty Cycle, D = T;
g 2. Per Unit Base = RmJA = 73°CIW
z 3. Ta, - TA = PDMZmJA“)
4. Surface Mounted
Single Pulse
10-4 10-3 Ity-it Io-l 1 10 100 600
Square Wave Pulse Duration (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Foot
g Duty Cycle = 0.5
TD 0.2
ti, 6 0.1
g F, 0.1
Single Pulse
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
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S-00269-Rev. A, 26-Apr-99 2-7
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