SI4542 ,30V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
SI4542DY ,N/P-Channel 30-V (D-S) Pair FaxBack 408-970-5600S-56944—Rev. D, 23-Nov-982-3V – Gate-to-Source Voltage (V) r – On-Resistan ..
SI4542DY ,N/P-Channel 30-V (D-S) Pair FaxBack 408-970-5600S-56944—Rev. D, 23-Nov-982-1Si4542DYVishay Siliconix
SI4542
30V Complementary PowerTrench MOSFET
Si4542DY January 2001 Si4542DY 30V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using • Q1: N-Channel Fairchild’s advanced PowerTrench process that has 6 A, 30 V R = 28 mΩ @ V = 10V DS(on) GS been especially tailored to minimize the on-state resistance and yet maintain low gate charge for R = 35 mΩ @ V = 4.5V DS(on) GS superior switching performance. • Q2: P-Channel Applications –6 A, –30 V R = 32 mΩ @ V = –10V DS(on) GS • DC/DC converter R = 45 mΩ @ V = –4.5V DS(on) GS • Power management Q2 D2 D 5 4 D2 D D1 D 6 3 D1 D Q1 7 2 G2 SO-8 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 30 –30 V DSS V Gate-Source Voltage ±20 ±20 V GSS I Drain Current - Continuous (Note 1a) 6–6 A D - Pulsed 20 –20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4542 Si4542DY 13” 12mm 2500 units 2001 Fairchild Semiconductor International Si4542DY Rev A
