SI9804DY ,20-V (D-S) Single FaxBack 408-970-5600S-54699—Rev. B, 01-Sep-971Si9804DYVishay Siliconix
SI9804DY
20-V (D-S) Single
Si9804DY
VISHAY
N-Channel Reduced th, Fast Switching MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDs (V) riosion) (Q)
ssrt',' 066““
0.023 @ VGS = 4.5 V
In (A) titxl (ar"'
0.030 @ VGS = 3.0 v
003070)
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 25
Gate-Source Voltage VGS l 12
TA = 25°C cl: 7.8
Continuous Drain Current (To = 150°C)3 ID
TA = 70°C cl: 6.2
Pulsed Drain Current (10 us Pulse Width) IDM i40
Continuous Source Current (Diode Conduction)" ls i 2.1
TA = 25°C 2.5
Maximum Power Dissipation" PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 50 ''C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70626
S-54699-Rev. B, 01-Sep-97
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Si9804DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGs, ID = 250 WA 0.6 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = l 12 V l 100 nA
VDS=25V,VGS=0V 1
Zero Gate Voltage Drain Current lrss WA
VDs=25V,VGs=0V.TJ=55°C 5
On-State Drain Currenta IBM) VDS 2 5 V, VGS = 4.5 V 40 A
Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 7.8 A 0.018 0.023 Q
VGS = 3.0 V, ID = 6.8 A 0.022 0.030
Forward Transconductancea gfs Vos = 10 V, ID = 7.8 A 25 S
Diode Forward Voltagea VSD ls = 2.1 A, VGS = O V 0.71 1.2
Dynamic"
Total Gate Charge Qg 13.5 20
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 7.8 A 2.4 nC
Gate-Drain Charge di 4.2
Turn-On Delay Time td(on) 16 30
Rise Tlme tr VDD = 10 V, RL = 10 Q 30 60
Turn-Off Delay Time td(off) ID E 1 A, VGEN = 4.5 V, RG = 6 Q 46 90 ns
Fall Time tf 18 35
Source-Drain Reverse Recovery Time trr IF = 2.1 A, di/dt = 100 Alps 80 120
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70626
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2 S-54699-Rev. B, 01-Sep-97
VISHAY Si9804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 l 40
VGS = 5 thru 3 v y
5?, 'ii'
E 24 E 24
(i, 16 (i 16
I I TC = 125°C
0 2 v o /
- 8 ’ - 8
25°C I
1.5 v \/
0 2 4 6 8 IO 0 0.5 1.0 1.5 2.0 2.5 3.0
VDs - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.040 3000
A 0.032
ii VGs = 3 V 'tls 2000
fi. 0.024 8
gig VGS = 4.5 v g 1500
“I 0 016 g
L I 1000
f? 500
0 8 16 24 32 40 0 4 8 12 16 20
ID - Drain Current (A) VDs - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
4.5 2.0
VDS=10V Vss=10V
E 3.5 - b=7.8A A 1.6 - ID=7.8A "w''''''''
Q. 3 o / 2; -
o V I o
b' 2.5 / I-'; l'' "
3 ll) -
w? 2 0 / g? E o,,,,,-'''''''
St . / 8 2 0.8 ---''''
la,-',. 1.5 I v /
(D / e
a) 1.0 / 8 0.4
0 3 6 9 12 15 -50 0 50 100 150
Qg - Total Gate Charge (nC) To - Junction Temperature (°C)
Document Number: 70626 www.vishay.com . FaxBack 408-970-5600
S-54699-Rev. B, 01-Sep-97 3
Si9804DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Source-Drain Diode Forward Voltage
TJ =150°c
| S — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
'ss, ko=250pA
-0.0 'sc
VGS(th) Variance (V)
-50 0 50 100 1 50
T: - Temperature CC)
rDS(on) — On-Resistance ( Q )
Power (W)
On-Resistance vs. Gate-to-Source Voltage
0.06 ID = 7.8 A
0.02 _
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.01 0.1 1 10 30
Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Thermal Impedance
Single Pulse
10-4 10-3 1o-2
Notes:
_.L: _
1. Duty Cycle, D = T
2. Per Unit Base = RNA = 50°CNV
3. To, - TA = PrusZthoA(t)
4. Surface Mounted
Square Wave Pulse Duration (sec)
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Document Number: 70626
S-54699-Rev. B, 01-Sep-97
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