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SI9928DYVISHAYN/a20avaiN/P-Channel 20-V (D-S) Pair


SI9928DY ,N/P-Channel 20-V (D-S) Pair  FaxBack 408-970-5600S-00652—Rev. G, 27-Mar-001Si9928DYVishay Siliconix 

SI9928DY
N/P-Channel 20-V (D-S) Pair
Si9928DY
Vishay Siliconix
VISHAY
Complimentary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.05 @ vss = 4.5 v d: 5.0
N-Channel 20 0.06 @ N/ss = 3.0 v i4.2
0.08@VGS=2.7V 21:36
0.11@VGs=-4.5V 21:3.4
P-Channel -20 0.15 @ Vcs = -31) v l 2.9
0.19@VGs=-2.7V 21:26
D1 D1 S2
MA G'"'-]
Top View
S1 D2 D2
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 20 -20
Gate-Source Voltage VGS d: 12 l 12
TA=25°C i5.0 i3.4
Continuous Drain Current (To = 15o°c)a ID
TA: 70°C i4.0 i2.8 A
Pulsed Drain Current IDM i10 i 10
Continuous Source Current (Diode Conduction)a IS 2.0 -2.0
TA = 25°C 2.0 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3 1.3
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambienta RthJA 62.5 °CNV
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70143 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu G, 27-Mar-00 1
Si9928DY
. . . . VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Vros = VGS, ID = 250 0A N-Ch 0.8 1.2
Gate Threshold Voltage Vesah) V
VDS = VGS, ID = -250 WA P-Ch -0.8 -1.1
N-Ch cl: 100
Gate-Body Leakage less VDs = 0 V, VGS = ck 12 V nA
P-Ch i 100
v.33: 16V, v63: 0v N-Ch 1
' 1/ros=-16V,VGs=0V P-Ch -1
Zero Gate Voltage Drain Current loss “A
1/Ds=10V,Vss=0V,TJ--70oC N-Ch 5
1/Ds=-10V,Vss=0V,Tv=700C P-Ch -5
vDs 2 5 v, VGS = 4.5 v N-Ch IO
On-State Drain Currentb loom) A
Vros S -5 V, VGS = -4.5 V P-Ch -10
VCs = 4.5 V, ID = 5.0 A N-Ch 0.041 0.05
VGS = -4.5 V, ID = -3.2 A P-Ch 0.087 0.11
VGS = 3.0 V, ID = 3.9 A N-Ch 0.052 0.06
Drain-Source On-State Resistanceb roam) Q
VGS---3.0 V, b=-2.0A P-Ch 0.120 0.15
VGS = 2.7 V, ID = 1.0 A N-Ch 0.060 0.08
VGS=-2.7V, lD=-11JA P-Ch 0.135 0.19
v.33: 10 v, ID=5.0 A N-Ch 13
Forward Transconductanceb git S
vDS = -9 V, ID = -3.2 A P-Ch 8
Is = 5.0 A, Vss = 0 v N-Ch 0.9 1.2
Diode Forward Voltageb VSD V
ls = -2.0 A, VGS = 0 v P-Ch Ah9 -1.2
Dynamica
N-Ch 10 20
Total Gate Charge 09
N-Channel P-Ch 8 20
V =6V, V =4.5VI =5.0A
DS GS D N-Ch 2.6
Gate-Source Charge Qgs P-Channel nC
Vos = A, V, VGS = -4.5 v, ID = -3.2 A P-Ch 1.6
N-Ch 3.7
Gate-Drain Charge di
P-Ch 3.5
T O D I Ti N-Ch 13 3O
urn- n e ay Ime td
(on) P-Ch 22 40
N-Channel
Ri T, t VDD = 6 v, RL = 6 Q N-Ch 9 40
156 me I E1A,V =4.5V,R =69
r D GEN G P-Ch 43 80
P-Channel
T OffDel T td N/roro=-6V,RL=6Q N-Ch 30 60
urn- eay me I x-INV =-4.5V,R =69 ns
(off) D GEN G P-Ch 35 70
N-Ch 9 30
Fall Time tf
P-Ch 20 40
. IF = 5.0 A, di/dt = 100 Alps N-Ch 100 150
Source-Drain Reverse Recovery Time trr
IF = -2,0 A, di/dt = 100 Alps P-Ch 75 100
a. For design aid only; not subject to production testing.
b. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70143
2 S-00652-Rev. G, 27-Mar-00
VISHAY
Si9928DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
20 I I
ff VGS = 5.5, 5, 4.5, 4, 3.5 v
16 f f 3 v
I' 8 2.5 v
T 1.5 v
0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10 I
A 0.08 - VGS=2.7V j V63: 3V
8 O 06 4 l
g?) N/ss = 4.5 V
8 0.04
b' 0.02
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
7 sp'''"
A 6 VDS = 6 v
2 ID = 5 A /
[l,', 5 /
J? s,/''"
55’ /’
(D 2 l
0 3 6 9 12 15
Output Characteristics
Qg - Total Gate Charge (nC)
r DS(on)— On-Resistance( Q)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
N-CHANNEL
Transfer Characteristics
16 (/f/
Tc = 125 c 2500
éé/ -5r'C
0 0.5 1.0 1.5 2.0 3.0 3.5 4.0
N/ss - Gate-to-Source Voltage (V)
Capacitance
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
1.6 - ID = 5 A s.,,,.,,,-"'''"
w,,,,,,,,,,-'''''"'"
0.8 o,.,,,-"'''''
-50 0 50 100 150
TJ - Junction Temperature (°C)
Document Number: 70143
S-00652-Reu G, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
Si9928DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
Normalized Effective Transient
Source-Drain Diode Forward Voltage
To = 150°C
0 0.4 0.8 1.2 1.6 2.0
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.5 ID = 250 “A
g "s-ss,.
E 0.0 \
g." "ss.
c7)’ "ss.
-50 0 50 100 1 50
TJ - Temperature CC)
Duty Cycle = 0.5
Thermal Impedance
Single Pulse
10-4 W3 10-2
FDS(on) — On—Resistance( Q )
Power (W)
On-Resistance vs. Gate-to-Source Voltage
lro=1A
0 1 2 3 4 5 6
Was - Gate-to-Source Voltage (V)
Single Pulse Power
0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
1. Duty Cycle, D = '-I
2. Per Unit Base = RNA = 62.5"CNV
3. To, - TA = PDMzthJAm
4. Surface Mounted
www.vishay.com . FaxBack 408-970-5600
Document Number: 70143
S-00652-Rev. G, 27-Mar-00
VISHAY Si9928DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Output Characteristics Transfer Characteristics
10 I I 10
VGS = 5, 4 V
Cd.'. /" Ct
E 6 E 6
Es 4 E 4
D D I TC =I125 C
2 2 I I l
2, 1 V 25°C y
i l \5 -55c'C
0 2 4 6 8 10 O 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Vos - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.25 2000
Cl 0.20 1500
V VGS = 2.7 V C"
tr' VGS = 3 v g
i'!' 0.15 ,/ ,/,e--e'''''' 'g 1000
k w.-''''' _,.,..-" a 'Rs C.
(u ISS
O r.,---'''''''' w..,,,...-------'"" O 'cu,
L -"''''" I "'"'ss,.
g s...---'"" VGS = 4.5 V O
iri 0.10 500 Cass
Ns,,, Crss
0.05 0
0 1 2 3 4 5 6 O 2 4 6 8 10
ID - Drain Current (A) Vos - Drain-to-Source Voltage(V)
5 Gate Charge 1 6 On-Resistance vs. Junction Temperature
A VDS=6V Vss=4.51/
a 4- b--3.2A / A 1.4- |D=3.2A "''
tD / Cl
si,?,; / , w,.,.,,,,,,-''''''''''"
3 A 1 2
b' I ll E w,.,-'''''"
3 U) =
O ID (u
"T Cl ?5 . ,,,,i'"
(I,-',. I
(D E" w,,,.,,,,.,,,---''''''"
U, 1 8 0.8
0 2 4 6 8 10 -50 0 50 100 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70143 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu G, 27-Mar-00 5
Si9928DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25 o C UNLESS NOTED) P-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.20
T: = 150°C
A 0.17
E 8 ( ID = 3.2 A
g g 0.14
ago , 0.11 N,
o) g "ss,
g 0.08
1 0.05
0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
1.0 25 l
0.5 ID = 250 WA 1
g . m..,,,.,...---"'''''"" g l
g as 10
> -0d, N
-50 0 50 100 150 10-2 IO-l 1 10 30
TJ - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E g 0.2
i, 8 Notes:
15' , 0.1 1
i'r', F, 0.1 PM
8 E -1 t _
'i-lf-' ta
E 1. Duty Cycle, D = '-I
2 2. Per Unit Base = RNA = 62.5"CNV
. 3. To, - TA = PDMzthJAm
Single Pulse 4. Surface Mounted
10-3 10-2 10-1
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600
Document Number: 70143
S-00652-Rev. G, 27-Mar-00
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