SI9942DY ,N/P-Channel 30-V (D-S) PairSi9942DYVishay SiliconixComplimentary 20-V (D-S) MOSFET
SI9940DY
Dual N-Channel Enhancement Mode MOSFET
'slit?,):!,,,),!,), Si9940DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
“E (V) rDS(on) (Q) ID (A)
50 0.05 @ VGS = 10 V d: 5.3
0.07 (ii) Vos = 4.5 V :I:4.5
So-16* Ihlhih D2 D2 D2
GI o-- G2 o---
S} s, s, S2
Top View N-Channel MOSFET' N-Channel MOSFET
*Conforms to standard SO-l6 dimensions
Absolute Maximum Ratings (TA = 25° C Unless Otherwise Noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50
Gate-Source Voltage Vos l 20
TA = 25°C * 5.3
Continuous Drain Current (Ts = 150°C)a ID
TA = 70°C i 4.2
Pulsed Drain Current IBM 1 20
Continuous Source Current (Diode Conduction)" ls 2.5
. TA = 25°C 2.5
Maximum Power Dissipation'' PD W
TA = 70"C 1.6
Operating Junction and Storage Temperature Range Tr, Tug M5 to 150 "C
Thermal Resistance Ratings
Parameter Symbol Limit Unit
Maximum Jurtction-to-Ambienta Rmm 50 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#1211. A SPICE Model data sheet is available for this product (FaxBack document #5106).
Siliconix 2-123
S-47958--Rev. F, 15-Apr-96
CCI BESH?35 002005]: 8hh l:
LITTLE FOOT M
Si9940DY £3936]?
Specifications (T J = 25°C Unless Otherwise Noted)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(lh) VDs = Vas, ID = 250 WA 1.0 V
Gate-Body Leakage ' loss VDS = 0 V, VGS = :t 20 v :h 100 _ nA
VDs=40V,Vos--0V 2
Zero Gate Voltage Drain Current IDSS WA
VDS=40V,VGS=OV,TJ=55°C 25
On-State Drain Currentb ID(on) Vros it 5 V, VGs = 10 V 20 A
Drain-Source tht-State Resistanceb muon) VGS = 10 V, In = 5.3 A 0042 0.05 Q
Vos = 4.5 V, ID = 4.5 A 0.055 0.07
Forward Transconductanceb gfs VDS = 15 V, ID = 5.3 A 11 S
Diode Forward Voltageb VSD Is = 1.5 A, Vrss = 0 V 0.8 1.2 V
Dynamic''
Total Gate Charge Qg 30 50
Gate-Source Charge Qgs VDS = 25 V, VGS = 10 V, ID = 2 A 2.5 nC
Gate-Drain Charge di 9.4
Titnt-0n Delay Time ki(on) 17 40
Rise Time tr VDD = 25 V, RL = 25 Q 30 60
Turn-Off Delay Time mm ID - 1 A, VGEN = 10 V, R0 = 6 Q 95 150 ns
Fall Time tt 55 100
Source-Drain Reverse Recovery Time trr IF = 1.5 A, di/dt = i00 A/us 130
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width s 300 us, duty cycle s 2%.
2-124 _ Siliconix
S-47958---Rev, F, 15-Apr-96
III 6359735 UUEUHEE 756 l:
Il—IJIAJ J_L
'J?y)1,lrof, Si99401DY
Typical Characteristier(25oC Unless Otherwise Noted)
Output Characteristics Transfer Characteristics
20 T 1 20
Vas =10, 9, 8, 7, 6, 5 V
4 V T '
16 4;: 16
E 12 I 't' 12
a l/ t:
P, E 8
f J? Tc-- 125''C
I 3 v 25°C
-.55"C
0 l 2 3 4 l 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
on-Resistance vs. Drain Current Capacitance
0.10 2500
G 0 08 l A 000
"i' ,,.,w''' li,
(i', 0.06 Vos = 4.5 V .,/ tlo', 1500
sit i Js, C
o 0.04 VGs = 10 v 6 1000 tSS
Ci.'. 0
i? 0-02 500 "t Coss
0 4 g 12 16 20 24 28 0 10 20 30 40 50
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge 2 0 On.Reststanee vs. Junction Temperature
10 1 l . l l
A VDS=25V VGs=lOV
t 8 --ID--2A 1 A 1.6 _ID=5.3A eva'''''
g". w''''" G . ',,,,e'''''
i', 6 / Es ,/
e .tii .3 1.2 "''"
ji,', /" E "il' w,.,--''
g / k C) 1/
is. 4 I 0 E 0.8 I
a I g "..-"
£3 2 / E 0.4
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) T] - Junction Temperature (°C)
Siliconix
SM7958-Rev. F, 15-Apr-96
© 629-035 UUEULIEIB [:qu CI
LITTLE FOOT fit?)
.. . 4 TEMIC
Si99 0DY Semiconductors
I . . o .
Typical Characteristics (25 C Unless Otherwise N oted)
20 Source-Drain Diode Forward Voltage 0 08 On-Resistance vs. Gate-to-Source Voltage
T; = 150°C l
G? 10 iii 0.06 t
ii; 8 1., = 5,3 A
U '7) '
8 g 0.04
J.? g. 0.02
1 0.00
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
1 0 Threshold Voltage 25 Single Pulse Power
8 1 = 250 A
g 'ss., D WA t 15 ,
5 0.0 "
> "ss, 3
'ii' "ss. k?, 10
~05 tt
-50 0 50 100 I50 . 0.01 0.1 1 10 100
Ts - Temperature (°C) Time (sec)
2 Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
.lt', ll Notes:
3.15. 0.1 T
'(iri' 0.1 ''r
E o 1..
'ii' fi ---V1 Q t
g l. Duty Cycle, D -- T"
fi 2. Per Unit Base = RNA = 5tptyw
. 3. Tm 'TA = PDMZthJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-l 1 10 30
Square Wave Pulse Duration (sec)
2-126 Siliconix
S-47958--Rev. F, 15-Apr-96
cn BESH?35 DDEUHEH 520 ©
--------------"-'
Silietotnibt
AMember of the name Group
SILICONIX INC
SO Package (Y Suffix), 8-16 Leads
ESE D Cl 3259735 0011736") Tb? IZISIX
1 2 - Millimeters Inches
Dim Min Max Min M81
A 1.35 1.75 0.053 0.069
N 0.10 0.20 0.004 0.008
B 0.35 0.45 0.014 0.018
C 0.18 0.23 0.007 0.009
b D I D-8 4.60 5.20 0.181 0.205
-T-f D-l4 8.35 8.95 0.329 0.352
ijitil,,j, A D-16 9.60 1020 0.378 0.402
"i? E 3.55 4.05 0.140 0.160
Il:-) L N e 1.27 BSC 0.0SOBSC
B H 5.70 6.30 0.224 0.248
L 0.60 0.80 0.024 0.031
8 O' 8° 0° 8°
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