SI9953DY. ,Dual P-Channel Enhancement Mode MOSFETapplications where low in-line power loss andfast switching are required.
SI9955DY ,Dual N-Channel Enhancement Mode MOSFETSi9955DYJune 1999Si9955DY*Dual N-Channel Enhancement Mode MOSFET
SI9956DY ,N-channel enhancement mode field-effect transistorSi9956DYVishay SiliconixDual N-Channel 20-V (D-S) MOSFET
SI9953DY.
Dual P-Channel Enhancement Mode MOSFET
Si9953DY June 1999 Si9953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are � -2.3 A, -20 V. R = 0.250 Ω @ V = -10 V DS(on) GS produced using Fairchild Semiconductor’s advance R = 0.400 Ω @ V = -4.5 V. DS(on) GS process that has been especially tailored to minimize on- � Low gate charge. state resistance and yet maintain superior switching performance. � Fast switching speed. These devices are well suited for low voltage and battery � High power and current handling capability. powered applications where low in-line power loss and fast switching are required. Applications � Battery switch � Load switch � Motor controls ’� ’� ’� ’� *� 6� *� 62�� 6� R 7 &XQOHVVRWKHUZLVHQRWHG$$EVROXWH�0D[LPXP�5DWLQJV 6\PERO 3DUDPHWHU 5DWLQJV 8QLWV 9’UDLQ6RXUFH9ROWDJH96 9*DWH6RXUFH9ROWDJH96± ,’UDLQ&XUUHQW&RQWLQXRXV1RWHD$’ O3HXVG 33RZHU’LVVLSDWLRQIRU’XDO2SHUDWLRQ:’ 3RZHU’LSDWLRQIRU6LQJOH2SHUDWLRQ1RWHD 1RWHE 1RWHF 772SHUDWLQJDQG6WRUDJH-XQFWLRQ7HPSHUDWXUH5DQJHWR&-*67 ° 7KHUPDO�&KDUDFWHULVWLFV 7KHUPDO5HVLWVDQFH-XQFWLRQWR$PELHQW&:5° θ 7KHUPDO5HVLWVDQFH-XQFWLRQWR&DVH1RWH&:°5θ 3DFNDJH�0DUNLQJ�DQG�2UGHULQJ�,QIRUPDWLRQ ’HYLHF0DUNLQJHY’LFH5HHO6HL]7DSHZLGWK4XDQWLW\ 6L’<¶¶PPXQLWV ��’LHDQGPDFWQJVRXUFHVXEMHFWWRFKDQJHZLWKWRXSRURQWLILFDWLRQ � Si9953DY Rev. A 1999 ULXULDQXI -& -$ VVL *6 ’6
