SI9953DY ,Dual P-Channel Enhancement Mode MOSFETSi9953DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFET
SI9953DY
Dual P-Channel Enhancement Mode MOSFET
Si9953DY
VISHAY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
20 0.25@VGs=-10V i2.3
0.40@Vcs=-A.5V i1.5
Glo-] G'?OT
Top View
D1 D1 D2 D2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros -20
Gate-Source Voltage VGS i 20
TA = 25°C ck 2.3
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C ch 1.8
Pulsed Drain Current 'DM 1 10
Continuous Source Current (Diode Conduction)a ls -1.7
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 62.5 ''C/W
a. Surface Mounted on FR4 Board,t s 10 sec.
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S-00652-Reu K, 27-Mar-00 1
Si9953DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 MA -1.0 V
Gate-Body Leakage less Vos = 0 V, VGS = 120 V i 100 nA
VDs=-16V,VGs=0V -2
Zero Gate Voltage Drain Current loss “A
Vros=-161/,Vss--0V,Tu--55l -25
On-State Drain Currentb low”) VDS S -5 V, VGS = -1 0 V -10 A
1/ros s -5 V,N/ss=-A.5V -1.5
VGs=-10V, ID: 1 A 0.12 0.25
Drain-Source On-State Resistanceb rDs(on) Q
VGS = -4.5 v, b = 0.5 A 0.22 0.40
Forward Transconductanceb gts Vos = -15 V, ID = -22 A 2.5
Diode Forward Voltageb VSD ls = -1.7 A, VGS = O V AJ.8 -1.2
Dynamic"
Total Gate Charge Q9 6.7 25
Gate-Source Charge Qgs VDs = -10 V, VGS = -1 0 V, ID = -2.3 A 1.3 n0
Gate-Drain Charge di 1.6
Turn-On Delay Time tdwn) 10 40
Rise Time tr VDD = -10 V, RL = 10 Q 12 40
Turn-Off Delay Tlme tum) '0 E -1 A, VGEN = -10 V, RG = 6 Q 20 90 ns
Fall Time tr 10 50
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 70 100
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
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Document Number: 70138
S-00652-Rev. K, 27-Mar-00
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Si9953DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 10 - 7 V
12 6 V
"t,' 9 r
a -''''""
_ 3 4V -
0 2 4 6 8 10
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
fi. 0.6
I ,..,i'
ff' 0.2 o----'''''" N/ss =10 v
0 2 4 6 8
ID - Drain Current (A)
Gate Charge
VDS =10 V /
g 8 ID = 2.3 A
5 v,,/''
0 2 4 6 8
% - Total Gate Charge (nC)
r DS(on)- On-Resistance ( Q
C — Capacitance
(Normalized)
Transfer Characteristics
10 I I
2500 125°C
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Capacitance
O 5 10 15 20
l/ns - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1.6 - VGS=10V
b=1.0A /
1.2 l//
0.8 "w''''
-50 -25 0 25 50 75 100 125 150
Tu - Junction Temperature (°C)
Document Number: 70138
S-00652-Reu K, 27-Mar-00
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Si9953DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10 TJ=150°C
Is — Source Current (A)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
D=25011A
0.2 ",,w'''
VGS(th) Vanance (V)
-50 -25 o 25 50 75 100 125 150
T: - Temperature (°C)
FDS(on) — On-Resistance (
On-Resistance vs. Gate-to-Source Voltage
0.8 - ID = 2.3 A
0.4 ls
0 2 4 6 8 10
Was - Gate-to-Source Voltage (V)
Single Pulse Power
0.010 0.100 1 10 30
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Js g 0.2
2' g 0.1
t E 0.1
G.) (D
Single Pulse
10-4 10-3 10-2
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T1
2. Per Unit Base = Rth0A = 62.5°CNV
3. TJM - TA = PoMZtruA(t)
4. Surface Mounted
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Document Number: 70138
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