SI9955DY ,Dual N-Channel Enhancement Mode MOSFETSi9955DYJune 1999Si9955DY*Dual N-Channel Enhancement Mode MOSFET
SI9956DY ,N-channel enhancement mode field-effect transistorSi9956DYVishay SiliconixDual N-Channel 20-V (D-S) MOSFET
SI9955DY
Dual N-Channel Enhancement Mode MOSFET
Si9955DY June 1999 Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are � 3.0 A, 50 V. R = 0.130 Ω @ V = 10 V DS(ON) GS produced using Fairchild Semiconductor’s advance R = 0.200 Ω @ V = 4.5 V process that has been especially tailored to minimize DS(ON) GS on-state resistance and yet maintain superior switching performance. � Low gate charge. These devices are well suited for low voltage and � Fast switching speed. battery powered applications where low in-line power � High power and current handling capability. loss and fast switching are required. Applications � Battery switch � Load switch � Motor controls ’� ’� ’� ’� *� 6� *� 62�� 6� 7 &XQOHVVRWKHUZLVHQRWHG $EVROXWH�0D[LPXP�5DWLQJV��$ 6\PERO 3DUDPHWHU 5DWLQJV 8QLWV 9’66’UDLQ6RXUFH9ROWDJH9 9*DWH6RXUFH9ROWDJH9*66 ± ,’UDLQ&XUUHQW&RQWLQXRXV1RWHD$’ 3XOVHG 33RZHU’LVVLSDWLRQIRU6LQJOH2SHUDWLRQ:’ 3RZHU’LVVLSDWLRQIRU6LQJOH2SHUDWLRQ1RWHD 1RWHE 1RWHF 772SHUDWLQJDQG6WRUDJH-XQFWLRQ7HPSHUDWXUH5DQJHWR&-67* ° 7KHUPDO�&KDUDFWHULVWLFV 7KHUPDO5HVLVWDQFH-XQFWLRQWR$PELHQW&:5° -$ θ 7KHUPDO5HVLVWDQFH-XQFWLRQWR&DVH1RWH&:°5-& θ 3DFNDJH�2XWOLQHV�DQG�2UGHULQJ�,QIRUPDWLRQ ’HYLFH0DUNLQJ’HYLFH5HHO6L]H7DSH:LGWK4XDQWLW\ 6,’<¶¶PPXQLWV ������’LHDQGPDQXIDFWXULQJVRXUFHVXEMHFWWRFKDQJHZLWKRXWSULRUQRWLILFDWLRQ � 1999 Si9955DY Rev. A
