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SMA661ASTRSTN/a3890avaiFULLY INTEGRTED GPS LNA ICs


SMA661ASTR ,FULLY INTEGRTED GPS LNA ICsElectrical characteristics . . . . . . . 43 Typical performance . 54 Evaluation board desc ..
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SMA661ASTR
FULLY INTEGRTED GPS LNA ICs
September 2013 Rev 6 1/14
SMA661AS

Fully integrated GPS LNA IC
Features
Power down function Integrated matching networks Low noise figure 1.15 dB @ 1.575 GHz High gain 18 dB @ 1.575 GHz High linearity (IIP3 = +3 dBm) Temperature compensated Unconditionally stable ESD protection (HBM ± 2 kV) 70 GHz Silicon Germanium technology
Applications
GPS
Description

The SMA661AS is the first low-noise amplifier
with integrated matching networks and embedded
power-down function. The chip, which requires
only one external input capacitor, drastically
reduces the application bill of materials and the
PCB area, resulting in an ideal solution for
compact and cost-effective GPS LNA.
The SMA661AS, using the ST's leading-edge GHz SiGe BiCMOS technology, achieves
excellent RF performance at the GPS frequency of
1.575 GHz, in terms of power gain, noise Figure
and linearity with a current consumption of
8.5 mA.
The device is unconditionally stable and ESD
protected. All these features are steady over the
operating temperature range of -40 o C to +85 oC.
It's housed in ultra-miniature SOT666 plastic
package.

Table 1. Device summary
Contents SMA661AS
2/14
Contents Pins description and circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Evaluation board description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package and packing informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.1 Package informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2 Packing informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
SMA661AS Pins description and circuit schematic
3/14 Pins description and circuit schematic

Figure 1. Pin connection
Figure 2. Application circuit schematic
Table 2. Pins description
Electrical specifications SMA661AS
4/14
2 Electrical specifications
2.1 Absolute maximum ratings


2.2 Electrical characteristics

(Ta = +25 °C, VCC = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured
according to Figure 13 at pin level)

Table 3. Absolute maximum ratings
Table 4. Electrical characteristics
The device is switched to OFF state The device is switched to ON state
SMA661AS Typical performance
3 Typical performance

(Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13 at pin level)
Figure 3. Power gain vs. frequency Figure 4. Input return loss vs. frequency
Figure 5. Noise figure vs. frequency Figure 6. Reverse isolation vs. frequency
Figure 7. Output return loss vs. frequency Figure 8. IIP3 vs. temperature
Typical performance SMA661AS
Note: S-Parameter are available on request.
Figure 9. Current consumption vs.
temperature
Figure 10. Gain power down vs. temperature
Figure 11. Power down current vs. temperature

SMA661AS Typical performance
7/14
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