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SMA6F5.0A-TR
Transil Std 600 W Uni
September 2011 Doc ID 14996 Rev 2 1/9
SMA6FHigh junction temperature T ransil™
Features ECOPACK® 2 compliant product Peak pulse power: 600 W (10/1000 µs) 4 kW (8/20 µs) Stand off voltage: 5, 12 or 13 V Unidirectional type Low clamping voltage versus standard series Low leakage current, 0.2 µA at 25 °C Operating Tj max: 175 °C JEDEC registered package outline
Complies with the following standards IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G-Method 3015-7: class3B 25 kV (human body model)
Description The SMA6F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 600 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provides a
better safety margin to protect sensitive circuits
with extended life time expectancy.
Packaged in SMAflat non exposed pad, this
minimizes PCB space consumption (footprint in
accordance with IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
Characteristics SMA6F2/9 Doc ID 14996 Rev 2
1 Characteristics
Table 1. Absolute ratings (Tamb = 25 °C) For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistance
Table 3. Electrical characteristics - definitions (T amb = 25 °C)
SMA6F CharacteristicsDoc ID 14996 Rev 2 3/9
Figure 1. Definition of Ipp pulse
Table 4. Electrical characteristics - values (Tamb = 25 °C) Pulse test: tp <50ms. To calculate maximum clamping voltage at other surge currents, use the following formula
VCLmax = RD x IPP + VBRmax To calculate VBR versus junction temperature, use the following formula:
VBR @ Tj = VBR @ 25 °C x (1 + αT x (Tj - 25))
Figure 2. Relative peak power dissipation
versus initial junction temperature
Figure 3. Peak pulse power versus
exponential pulse durationj initial = 25 °C)
Characteristics SMA6F4/9 Doc ID 14996 Rev 2
Figure 4. Clamping voltage versus peak pulse current
(exponential waveform, maximum values)
Figure 5. Junction capacitance versus reverse applied voltage (typical values)
SMA6F CharacteristicsDoc ID 14996 Rev 2 5/9
Figure 6. Peak forward voltage drop versus
peak forward current (typical
values)
Figure 7. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 8. Thermal resistance junction to
ambient versus copper surface
under each lead
Figure 9. Leakage current versus junction
temperature (typical values)
Ordering information scheme SMA6F6/9 Doc ID 14996 Rev 2
Ordering information scheme
Figure 10. Ordering information scheme
