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SMBT3906U Fast Delivery,Good Price
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SMBT3906UInfineonN/a2900avaiGeneral Purpose Transistors


SMBT3906U ,General Purpose TransistorsSMBT3906UPNP Silicon Switching Transistor Array4

SMBT3906U
General Purpose Transistors
SMBT3906U
PNP Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors
with good matching in one package Complementary type: SMBT3904U (NPN)
EHA0717521E2B1E1
TR1
TR2
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
SMBT3906U
Electrical Characteristics at T
A =25°C, unless otherwise specified.
DC Characteristics
SMBT3906U
Electrical Characteristics at T
A = 25°C, unless otherwise specified.
AC Characteristics
SMBT3906U
Test circuit
Delay and rise time

EHN00059
-3.0 V
+0.5 V
<4.0
-10.6 V= 2%
<1.0
Storage time and fall time

EHN00060
-3.0 V
+9.1 V
<4.0 pF
1N916
<1.0 nsk
SMBT3906U
Total power dissipation P
tot = f (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load R
thJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Load
totmax / PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
SMBT3906U
Saturation voltage I
CEsat)FE
EHP00767V
BE sat0
CE satV,
DC current gain h
CE = 10V, normalized10mA-11010-1012
Short-circuit forward current
transfer ratio h
21e = f(IC)CE = 10V, f = 1MHz10
21e1-101
Open-circuit output admittance
22e = f (IC)CE
EHP00771
22e0-101
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